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Shin, Dong Won,Lee, So Young,Lee, Chang Hyun,Lee, Kwan-Soo,Park, Chi Hoon,McGrath, James E.,Zhang, Mingqiang,Moore, Robert B.,Lingwood, Mark D.,Madsen, Louis A.,Kim, Young Taek,Hwang, Inchul,Lee, Youn American Chemical Society 2013 Macromolecules Vol.46 No.19
<P>Ordered morphologies in disulfonated poly(arylene sulfide sulfone nitrile) (SPSN) copolymers were generated via thermal annealing followed by multiblock copolymer synthesis. While SPSN random copolymers (R-SPSN) showed featureless morphologies, the SPSN multiblock copolymers (B-SPSN) exhibited cocontinuous lamellar morphologies with a center-to-center interdomain size of up to 40 nm. In spite of the well-ordered, interconnected hydrophilic domains, the water self-diffusion coefficient (e.g., <I>D</I> = (0.7–2.0) × 10<SUP>–10</SUP> m<SUP>2</SUP> s<SUP>–1</SUP>) and proton conductivity (e.g., σ = 0.16–0.20 S cm<SUP>–1</SUP> in deionized water at 30 °C) through B-SPSN were lower than those of the corresponding R-SPSN (e.g., <I>D</I> = (3.5–3.9) × 10<SUP>–10</SUP> m<SUP>2</SUP> s<SUP>–1</SUP> and σ = 0.21 S cm<SUP>–1</SUP>) due to the relatively lower water uptake of the B-SPSN after thermal annealing. The reduced water uptake of B-SPSN was beneficial to reduction of peroxide degradation rate. Thermal annealing produced significant gains in morphological ordering and finer control over desired membrane properties for proton conduction applications.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/mamobx/2013/mamobx.2013.46.issue-19/ma400889t/production/images/medium/ma-2013-00889t_0010.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ma400889t'>ACS Electronic Supporting Info</A></P>
Ion dose and anneal temperature dependent studies of silicon implanted AlxGa1−xN
E. A. Moore,Y. K. Yeo,류미이 한국물리학회 2012 Current Applied Physics Vol.12 No.1
Electrical and optical activation studies of AlxGa1-xN (x ¼ 0.11 and 0.21) implanted with silicon were made as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1 × 1014 to 1 × 1015 cm-2 at room temperature. The implanted samples were subsequently annealed from 1100 to 1300 ℃ for 20 min in a nitrogen environment. A maximum electrical activation efficiency of 91% was obtained for the Al0.11Ga0.89N implanted with the highest dose of 1 × 1015 cm-2 even after annealing at 1150 ℃. 100% activation efficiencies were successfully obtained for the Al0.21Ga0.79N samples after annealing at 1300 ℃ for both doses of 5 × 1014 and 1 × 1015 cm-2. The mobility of the Si-implanted AlxGa1-xN increases with annealing temperature, and the highest mobilities are 109 and 98 cm2/V·s for Al0.11Ga0.89N and Al0.21Ga0.79N, respectively. The cathodoluminescence (CL)spectra for all the samples exhibited a sharp neutral-donor-bound exciton peak, and the CL intensity increases with annealing temperature, indicating successive improved implantation damage recovery as the annealing temperature is increased. These results provide the optimum annealing conditions for activation of implanted Si ions in AlxGa1-xN.
Mee-Yi Ryu,E. A. Moore,R. L. Hengehold,T. D. Steiner,Y. K. Yeo 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Electrical activation studies of Si-implanted AlxG1ကxN grown on sapphire substrate have been made as a function of ion dose, anneal temperature, and anneal time. The samples were annealed from 1200 to 1350 C with a 500 A thick AlN cap in a nitrogen environment. The optimum anneal temperature for Al0:25Ga0:75N samples implanted with a dose of 1 1015 cmက2 is around 1350 C, exhibiting nearly 87 % electrical activation eciency. Both the electrical activation eciency and Hall mobility of Si-implanted Al0:18Ga0:82N annealed at 1200 C from 5 to 25 min increase continuously with anneal time, but at a much slower rate as anneal time increases. The activation eciencies of 94 and 89 % were obtained for doses of 1 1015 and 5 1014 cmက2, respectively, after annealing at 1200 C for 25 min, which are the highest activation eciency reported for a given dose, to the best of our knowledge.
E. A. Moore,Y. K. Yeo,R. L. Hengehold,류미이 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.6
Both optical and electrical activation studies of Si-implanted Al0.45Ga0.55N for n-type conductivity have been made as a function of the ion dose and the anneal temperature by using cathodoluminescence (CL) and temperature-dependent Hall-effect measurements. Silicon ions were implanted at 200 keV with doses ranging from 1 × 1014 to 1 × 1015 cm−2 at room temperature. The samples were subsequently annealed from 1150 to 1350 ˚C for 20 min in a nitrogen environment. The CL intensity of the near band emission increased as the annealing temperature was increased, showing a successive implantation damage recovery. These CL results coincide well with the results of the annealing temperature-dependent electrical activation study. The carrier concentration (activation efficiency) and the Hall mobility also increase with increasing annealing temperature.
J. L. Tain,A. Algora,E. Estevez,B. Rubio,E. Valencia,D. Jordan,J. Aysto,T. Eronen,A. Jokinen,I. Moore,H. Pentilla,J. Riisanen,L. Batist,M. Bowry,M. Bunce,W. Gelletly,R. Caballero,G. Cortes,B. Gomez-Ho 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.23
A complete characterisation of the β-decay of neutron-rich nuclei can be obtained from the measurement of β-delayed gamma rays and, whenever the process is energetically possible, β-delayed neutrons. The accurate determination of the β-intensity distribution and the β-delayed neutron emission probability is of great relevance in the fields of reactor technology and nuclear astrophysics. A programme for combined measurements using the total absorption gamma-ray spectroscopy technique and both neutron counters and neutron time-of-flight spectrometers is presented.