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RISS 인기검색어
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- 저자 : Qiren Zhang (검색결과 5 건)
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First-principles study on electronic states of SrWO4 crystals containing F-type color centers
Min Song,Qiren Zhang,Tingyu Liu,Jigang Yin,Xiaofeng Guo,Haiyan Zhang,Xi’en Wang 한국물리학회 2009 Current Applied Physics Vol.9 No.4
The electronic structures of the SrWO4 crystals containing F-type color centers are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory using a numerically discrete variational (DV-Xα) method. The calculations indicate that either F or F+ center has donor energy level within the forbidden band. The electronic transition energies from the two donor levels to the bottom of the conduction band are 1.82 eV and 2.28 eV corresponding to the 685 nm and 545 nm absorption bands, respectively. It is, therefore, concluded that the 545–685 nm absorption bands are originated from the F and F+ center in SrWO4 crystal respectively. The electronic structures of the SrWO4 crystals containing F-type color centers are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory using a numerically discrete variational (DV-Xα) method. The calculations indicate that either F or F+ center has donor energy level within the forbidden band. The electronic transition energies from the two donor levels to the bottom of the conduction band are 1.82 eV and 2.28 eV corresponding to the 685 nm and 545 nm absorption bands, respectively. It is, therefore, concluded that the 545–685 nm absorption bands are originated from the F and F+ center in SrWO4 crystal respectively.
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Ab initio calculations of electronic structures of SrMoO4 crystals containing F and F+ color centers
Jigang Yin,Qiren Zhang,Tingyu Liu,Xiaofeng guo,Min Song,Xien Wang,Haiyan Zhang 한국물리학회 2009 Current Applied Physics Vol.9 No.6
The electronic structures of SrMoO4 crystals containing F and F+ color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory, using a numerically discrete variational (DV-Xα) method. From the calculation, it is concluded that F and F+ color centers have donor energy level in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 1.855 eV and 2.161 eV, respectively, which correspond to the 670 nm and 575 nm absorption bands. It is predicted that the 670 nm and 575 nm absorption bands originate from the F and F+ centers in SrMoO4 crystals. The electronic structures of SrMoO4 crystals containing F and F+ color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory, using a numerically discrete variational (DV-Xα) method. From the calculation, it is concluded that F and F+ color centers have donor energy level in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 1.855 eV and 2.161 eV, respectively, which correspond to the 670 nm and 575 nm absorption bands. It is predicted that the 670 nm and 575 nm absorption bands originate from the F and F+ centers in SrMoO4 crystals.
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First-principles study of LiBaF3 crystals containing interstitial fluoride
Hailing Qiao,Tingyu Liu,Qiren Zhang,Fang Cheng,Xiuwen Zhou 한국물리학회 2010 Current Applied Physics Vol.10 No.5
The positions of the interstitial fluoride atoms in LiBaF3 crystal are simulated by GULP. It is found that the formation energy is low when interstitial fluoride atoms at the center of the edge of the cube formed by Ba ions. The electronic structures and absorption bands for the perfect LiBaF3 crystal and the LiBaF3 crystal containing interstitial fluoride have been calculated using density functional theory code CASTEP. It is predicted that the interstitial fluoride atom combine with a formal lattice fluoride ion forming H center causes the 320 nm absorption band.
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Lusong Yu,Yuxing Zhang,Li Wang,Qiren Pan,Yiyang Wen 한국강구조학회 2024 International Journal of Steel Structures Vol.24 No.1
Concrete-fi lled steel tubes (CFSTs) are widely used in engineering structures due to their excellent mechanical properties and economic benefi ts. This study focused on the construction of artifi cial neural network (ANN) models with high prediction capabilities and prediction accuracies that could predict the axial compression load capacities of short CFST columns using machine learning methods. A database was created by searching literature published over the past 40 years regarding circular-CFST bearing-capacity testing. Three ANN models with diff erent input parameters were developed, and used the Whale Optimization Algorithm to optimize the network weights and thresholds, the core idea of which comes from the humpback whale's special bubble net attack method. Then, the predictions of the proposed machine learning models were also compared with the theoretical values produced by the formulas proposed in existing codes. The results show that the ANN models had higher accuracies and a wider application range than the existing code models. Based on the Garson's algorithm, we perform parameter sensitivity analysis on the network model to enhance the interpretability of the neural network model. Finally, a graphical user tool is built to make the strength of CFST can be predicted quickly.
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唐雪(Xu Tang),黄蓉(Rong Huang),张琪仁(Qiren Zhang) YIXIN 출판사 2023 教育教学研究论丛 Vol.1 No.2
家庭资本与学历层次都是影响个人就业的两个重要因素。本研究采用中国综合社会调查(CGSS)2017 的调查数据,利用 SPSS26.0 作为主要研究工具,探索以客观因素为代表和家庭资本和以主观因素为代表的学历层次对个体就业产生的影响,以及,家庭资本与学历层次之间是否也存在相关,从而叠加影响个人就业。研究发现,家庭资本和学历层次都对个人就业有显著的正向影响,家庭资本与学历层次之间也呈正相关。家庭资本、学历层次和个人就业两两之间均具有紧密联系。个人可以利用家庭资本的优势,或通过自身努力获得更高学历以弥补家庭资本的劣势,从而获得更好的就业机会。 Both family capital and education level are important factors that affect individuals’ employment. This study used survey data from the Chinese General Social Survey (CGSS) 2017 and conducted descriptive, correlation, and regression analyses on the data using SPSS 26.0 as the main research tool. It was found that both family capital and education level had a significant positive effect on individual employment, and there was also a positive correlation between family capital and education level. There is a strong connection between both family capital, education level and individual employment. Individuals can make use of the advantage of family capital or make up for the disadvantage of family capital by acquiring higher education through their own efforts, so as to obtain better employment opportunities.
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