http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Park Noh-Hwal (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Park, Noh-Hwal,Lee, Seung-Hoon,Jeong, Seung-Hyeon,Khim, Dongyoon,Kim, Yun Ho,Yoo, Sungmi,Noh, Yong-Young,Kim, Jang-Joo IOP 2018 Semiconductor science and technology Vol.33 No.3
<P>In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bilayer. To achieve the high mobility and low off current, highly purified and less purified s-SWNTs are successively coated to form the semiconducting layer consisting of poly (3-dodecylthiophene-2,5-diyl) (P3DDT)-wrapped high-pressure carbon mono oxide (HiPCO) SWNT (P3DDT-HiPCO) and poly (9, 9-di-n-dodecylfluorene) (PFDD)-wrapped plasma discharge (PD) SWNT (PFDD-PD). The SWNT transistors with bilayer SWNT networked film showed highly improved hole field-effect mobility (6.18?±?0.85 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP> average), on/off current ratio (10<SUP>7</SUP>), and off current (∼1 pA). Thus, the combination of less purified PFDD-PD (98%–99%) charge-injection layer and highly purified s-P3DDT-HiPCO (>99%) charge-transport layer as the bi-layered semiconducting film achieved high mobility and low off current simultaneously.</P>
-
High performance carbon nanotubes thin film transistors by selective ferric chloride doping
Park Noh-Hwal,Shin Eun Sol,Ryu Gi-Seong,Kwon Jimin,Ji Dongseob,Park Hyunjin,Kim Yun Ho,Noh Yong-Young 한국정보디스플레이학회 2023 Journal of information display Vol.24 No.2
Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach to achieve a very high field-effect mobility and on/off ratio for solution processed semiconducting SWNT TFTs, by selective doping through contact with a thin ferric chloride (FeCl3) dopant layer. The semiconducting layer is formed by a double spin coating of the highly purified (>99%) high pressure carbon mono oxide (HiPCO) SWNT sorted by wrapping of poly (3-dodecylthiophene-2,5-diyl) (P3DDT). In order to achieve effective hole injection from the top Au source electrode without increasing the off-state drain current, less purified (98-99%) SWNTs produced by the plasma discharge process sorted by wrapping of poly (9,9-di-n-dodecylfluorene) (PFDD) are formed on the top of HiPCO film. Significantly improved TFT performance is achieved by the insertion of a few nanometers of a FeCl3 dopant layer at the semiconductor-contact interface. A significant high hole field-effect of 48.35±3.11 cm2V−1s−1 (bare: 6.18±0.87 cm2V−1s−1) with a reasonable on/off current ratio of 105, and low off current of ∼80 pA, are obtained by controlling the concentration of FeCl3 dopant (thickness = 1.5 nm) at the contact. Mobility is improved further at 2.5nm thickness of the FeCl3 dopant layer resulting in a hole mobility of 177±13.2 cm2 V−1s−1, an on/off ratio of 7.4×103, and off state current of 1.2×10−9 A.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
