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Dereje, Mamo Melaku,Ji, Dongseob,Kang, So-Huei,Yang, Changduk,Noh, Yong-Young Applied Science Publishers 2017 Dyes and pigments Vol.145 No.-
<P><B>Abstract</B></P> <P>In this work, we investigate the effect of pre-aggregated solutions of diketopyrrolopyrrole (DPP)-based conjugated polymers to achieve highly-aligned polymer films for high-performance organic field-effect transistors (OFETs). A suitable marginal solvent is selected for 5-octyl-pentadecyl branched DPP and selenophene-based semiconducting polymer (PDPP(SE)-ε-C<SUB>8</SUB>C<SUB>15</SUB>) by utilizing the Hansen solubility parameter calculation. The anisotropic one-dimensional aligned PDPP(SE)-ε-C<SUB>8</SUB>C<SUB>15</SUB> film was off-center spin-coated from the pre-aggregated solution is studied by atomic force microscopy and polarized UV-Vis absorption spectroscopy. A significantly high hole mobility of 4.16 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP> was achieved from the OFETs with a unidirectionally-aligned PDPP(SE)-ε-C<SUB>8</SUB>C<SUB>15</SUB> film to the transistor channel direction.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Selection of suitable solvent for preparing pre-aggregated solutions of polymers. </LI> <LI> Formation of anisotropic thin films from the pre-aggregated polymer solutions. </LI> <LI> Directionally aligned polymer films differ in property and their FET performances. </LI> <LI> Thin films aligned parallel to the transistor channel direction show high mobility. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
High performance carbon nanotubes thin film transistors by selective ferric chloride doping
Park Noh-Hwal,Shin Eun Sol,Ryu Gi-Seong,Kwon Jimin,Ji Dongseob,Park Hyunjin,Kim Yun Ho,Noh Yong-Young 한국정보디스플레이학회 2023 Journal of information display Vol.24 No.2
Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach to achieve a very high field-effect mobility and on/off ratio for solution processed semiconducting SWNT TFTs, by selective doping through contact with a thin ferric chloride (FeCl3) dopant layer. The semiconducting layer is formed by a double spin coating of the highly purified (>99%) high pressure carbon mono oxide (HiPCO) SWNT sorted by wrapping of poly (3-dodecylthiophene-2,5-diyl) (P3DDT). In order to achieve effective hole injection from the top Au source electrode without increasing the off-state drain current, less purified (98-99%) SWNTs produced by the plasma discharge process sorted by wrapping of poly (9,9-di-n-dodecylfluorene) (PFDD) are formed on the top of HiPCO film. Significantly improved TFT performance is achieved by the insertion of a few nanometers of a FeCl3 dopant layer at the semiconductor-contact interface. A significant high hole field-effect of 48.35±3.11 cm2V−1s−1 (bare: 6.18±0.87 cm2V−1s−1) with a reasonable on/off current ratio of 105, and low off current of ∼80 pA, are obtained by controlling the concentration of FeCl3 dopant (thickness = 1.5 nm) at the contact. Mobility is improved further at 2.5nm thickness of the FeCl3 dopant layer resulting in a hole mobility of 177±13.2 cm2 V−1s−1, an on/off ratio of 7.4×103, and off state current of 1.2×10−9 A.
Zhu, Huihui,Liu, Ao,Luque, Hector Lopez,Sun, Huabin,Ji, Dongseob,Noh, Yong-Young American Chemical Society 2019 ACS NANO Vol.13 No.4
<P>Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C<SUB>6</SUB>H<SUB>5</SUB>C<SUB>2</SUB>H<SUB>4</SUB>NH<SUB>3</SUB>)<SUB>2</SUB>SnI<SUB>4</SUB> (hereafter abbreviated as (PEA)<SUB>2</SUB>SnI<SUB>4</SUB>) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)<SUB>2</SUB>SnI<SUB>4</SUB>/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)<SUB>2</SUB>SnI<SUB>4</SUB>/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity (<I>R</I>) of 6.3 × 10<SUP>4</SUP> A/W and detectivity (<I>D*</I>) of 1.12 × 10<SUP>17</SUP> Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.</P> [FIG OMISSION]</BR>
Kim, Rae-Hyung,Chu, Jia-Qi,Park, Jeong-Nam,Lee, Seo-Yong,Lee, Yeo-Joo,Ko, Mi-Kyeong,Hwang, Ji-Hyeon,Lee, Kwang-Nyeong,Kim, Su-Mi,Tark, Dongseob,Ko, Young-Joon,Lee, Hyang-Sim,Seo, Min-Goo,Park, Min-Eun 대한백신학회 2015 Clinical and Experimental Vaccine Research Vol.4 No.1
<P>We cloned the full-length cDNA of O Manisa, the virus for vaccinating against foot-and-mouth disease. The antigenic properties of the virus recovered from the cDNA were similar to those of the parental virus. Pathogenesis did not appear in the pigs, dairy goats or suckling mice, but neutralizing antibodies were raised 5-6 days after the virus challenge. The utilization of O Manisa as a safe vaccine strain will increase if recombinant viruses can be manipulated by inserting or removing a marker gene for differential serology or replacing the protective gene from another serotype.</P>