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RISS 인기검색어
- 검색키워드
- 저자 : P.Dharani (검색결과 4 건)
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High efficiency electrospun TiO2nanofiber based hybrid organic-inorganic perovskite solar cell
Dharani, Sabba,Mulmudi, Hemant Kumar,Yantara, Natalia,Thu Trang, Pham Thi,Park, Nam Gyu,Graetzel, Michael,Mhaisalkar, Subodh,Mathews, Nripan,Boix, Pablo P. The Royal Society of Chemistry 2014 Nanoscale Vol.6 No.3
The good electrical and morphological characteristics of TiO2 nanofibers and the high extinction coefficient of CH3NH3PbI3 perovskite are combined to obtain a solar cell with a power conversion efficiency of 9.8%. The increase of the film thickness dramatically diminishes the performance due to the reduction in porosity of the TiO2 nanofiber framework. The optimum device (similar to 413 nm film thickness) is compared to a planar device, where the latter produces higher V-oc but lower J(sc), and consequently lower efficiency at all measured light intensities.
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M. Mohana Rao,P.Dharani,T. Prasad Rao 대한전기학회 2009 Journal of Electrical Engineering & Technology Vol.4 No.1
In a Gas Insulated Substation (GIS), Very Fast Transients (VFTs) are generated mainly due to switching operations. These transients may cause internal faults, i.e., layer-to-layer faults in a capacitively graded bushing as it is one of the most important terminal equipment for GIS. The healthiness of the bushing is generally verified by measuring its leakage current. However, the change in current magnitude / pattern is only marginal for different types of fault conditions. Leakage current monitoring (LCM) systems generate large amounts of data and computer aided interpretation of defects may be of great assistance when analyzing this data. In view of the above, ANN techniques have been used in this study for identification of these minor faults. A single layer perceptron network, a two layer feed-forward back propagation network and cascade correlation (CC) network models are used to identify interlayer faults in the bushing. The effectiveness of the CC network over perceptron and back propagation networks in identification of a fault has been analysed as part of the paper.
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Rao, M.Mohana,Dharani, P.,Rao, T. Prasad The Korean Institute of Electrical Engineers 2009 Journal of Electrical Engineering & Technology Vol.4 No.1
In a Gas Insulated Substation (GIS), Very Fast Transients (VFTs) are generated mainly due to switching operations. These transients may cause internal faults, i.e., layer-to-layer faults in a capacitively graded bushing as it is one of the most important terminal equipment for GIS. The healthiness of the bushing is generally verified by measuring its leakage current. However, the change in current magnitude/pattern is only marginal for different types of fault conditions. Leakage current monitoring (LCM) systems generate large amounts of data and computer aided interpretation of defects may be of great assistance when analyzing this data. In view of the above, ANN techniques have been used in this study for identification of these minor faults. A single layer perceptron network, a two layer feed-forward back propagation network and cascade correlation (CC) network models are used to identify interlayer faults in the bushing. The effectiveness of the CC network over perceptron and back propagation networks in identification of a fault has been analysed as part of the paper.
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M. V. Ganeswara Rao,N. Ramanjaneyulu,Sumalatha Madugula,N. P. Dharani,K. Rajesh Babu,Kallepelli Sagar 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.2
In this article, we delve into the reliability of various oxide/4H-SiC interfaces when exposed to elevated temperatures and carrier-trapping conditions. Our investigation primarily centers around the impact of diff erent gate dielectric materials on the electrical characteristics of a low breakdown 4H-SiC-based MOSFET. The gate dielectrics under scrutiny include SiO2, Si3N4, AlN, Al2O3, Y2O3, and HfO2. We fi nd that the choice of gate oxide material signifi cantly infl uences the transistor’s performance, with gate oxides possessing higher relative permittivity notably enhancing its characteristics. Among the materials studied, HfO2 emerges as the most promising candidate, demonstrating superior immunity behaviors in the MOSFET. However, the use of HfO2 is associated with increased gate leakage current. To mitigate this drawback, we introduce a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. Interestingly, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, prove effective in preserving the transistor’s on-state performance metrics while limiting gate leakage current across the entire range of gate voltages examined. To validate the predictive capabilities of our modeling analysis, we compare our simulation results with experimental data from the literature, and we observe a favorable agreement. This research holds particular signifi cance in applications employing low-power MOSFETs, where reliability and durability are as critical as performance. For instance, in the context of power optimizers for photovoltaic modules, which fall under the category of low-load and low-voltage DC–DC converters, these devices play a pivotal role in enhancing energy generationunder challenging environmental conditions while ensuring long-term reliability.
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