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- 저자 : P. Gauthier (검색결과 2 건)
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Divergent reprogramming routes lead to alternative stem-cell states
Tonge, Peter D.,Corso, Andrew J.,Monetti, Claudio,Hussein, Samer M. I.,Puri, Mira C.,Michael, Iacovos P.,Li, Mira,Lee, Dong-Sung,Mar, Jessica C.,Cloonan, Nicole,Wood, David L.,Gauthier, Maely E.,Korn, Nature Publishing Group, a division of Macmillan P 2014 Nature Vol.516 No.7530
Pluripotency is defined by the ability of a cell to differentiate to the derivatives of all the three embryonic germ layers: ectoderm, mesoderm and endoderm. Pluripotent cells can be captured via the archetypal derivation of embryonic stem cells or via somatic cell reprogramming. Somatic cells are induced to acquire a pluripotent stem cell (iPSC) state through the forced expression of key transcription factors, and in the mouse these cells can fulfil the strictest of all developmental assays for pluripotent cells by generating completely iPSC-derived embryos and mice. However, it is not known whether there are additional classes of pluripotent cells, or what the spectrum of reprogrammed phenotypes encompasses. Here we explore alternative outcomes of somatic reprogramming by fully characterizing reprogrammed cells independent of preconceived definitions of iPSC states. We demonstrate that by maintaining elevated reprogramming factor expression levels, mouse embryonic fibroblasts go through unique epigenetic modifications to arrive at a stable, Nanog-positive, alternative pluripotent state. In doing so, we prove that the pluripotent spectrum can encompass multiple, unique cell states.
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Sensitivity of stabilized a-Se based X-ray photoconductors
M. Zahangir Kabir,M. Yunus,S.O. Kasap,O. Tousignant,H. Mani,P. Gauthier 한국물리학회 2006 Current Applied Physics Vol.6 No.3
A model explaining the ghosting mechanisms in amorphous selenium based X-ray image detectors is described by considering deeptrapping of charge carriers, trapped charges arising from previous exposures, trap lling eects, recombination between drifting andtrapped carriers, generation of X-ray induced new deep trap centers, space charge eects, carrier detrapping, and electric eld dependenttions, and the Poisson’s equation across the photoconductor for a pulse X-ray exposure by the nite dierence method. The numericalresults are compared with Monte Carlo simulations. The relative sensitivity decreases with increasing accumulative X-ray exposure anddecreasing applied electric eld. The sensitivity reduction at negative bias is greater than at positive bias. The theoretical model is tted toexperimental data. The comparison of the model with the experimental data reveals that the recombination between trapped and theoppositely charged drifting carriers, electric eld dependent charge carrier generation and X-ray induced new deep trap centers are mainly responsible for the sensitivity reduction in biased amorphous selenium based X-ray detectors.
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