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      • KCI등재후보

        Sensitivity of stabilized a-Se based X-ray photoconductors

        M. Zahangir Kabir,M. Yunus,S.O. Kasap,O. Tousignant,H. Mani,P. Gauthier 한국물리학회 2006 Current Applied Physics Vol.6 No.3

        A model explaining the ghosting mechanisms in amorphous selenium based X-ray image detectors is described by considering deeptrapping of charge carriers, trapped charges arising from previous exposures, trap lling eects, recombination between drifting andtrapped carriers, generation of X-ray induced new deep trap centers, space charge eects, carrier detrapping, and electric eld dependenttions, and the Poisson’s equation across the photoconductor for a pulse X-ray exposure by the nite dierence method. The numericalresults are compared with Monte Carlo simulations. The relative sensitivity decreases with increasing accumulative X-ray exposure anddecreasing applied electric eld. The sensitivity reduction at negative bias is greater than at positive bias. The theoretical model is tted toexperimental data. The comparison of the model with the experimental data reveals that the recombination between trapped and theoppositely charged drifting carriers, electric eld dependent charge carrier generation and X-ray induced new deep trap centers are mainly responsible for the sensitivity reduction in biased amorphous selenium based X-ray detectors.

      • KCI등재후보

        Recent advances in X-ray photoconductors for direct conversion X-ray image detectors

        S.O. Kasap,M. Zahangir Kabir,J.A. Rowlands 한국물리학회 2006 Current Applied Physics Vol.6 No.3

        Recent research on at panel X-ray image detectors has shown their potential for replacing existing X-ray lm/screen cassettes andcapturing X-ray images electronically, thus enabling the clinical transition to digital radiography. The present work examines the imagingproperties of a number of potential X-ray photoconductors for these new X-ray image detectors. The X-ray sensitivity is discussed interms of the absorption eciency, electronhole pair creation energy (ionization energy), and charge transport and trapping limitedattention to stabilized a-Se and HgI2, currently the most promising materials

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