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Pulsed Magnetron Sputtering Deposit ion of DLC Films Part I : Low-Voltage Bias-Assisted Deposition
Oskomov, Konstantin V.,Chun, Hui-Gon,You, Yong-Zoo,Lee, Jing-Hyuk,Kim, Kwang-Bok,Cho, Tong-Yul,Sochogov, Nikolay S.,Zakharov, Alexender N. The Korean Institute of Surface Engineering 2003 한국표면공학회지 Vol.36 No.1
Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.
Pulsed Magnetron Sputtering Deposition of DLC Films Part Ⅰ
Konstantin V. Oskomov,Hui-Gon Chun,Yong-Zoo You,Jing-Hyuk Lee,Kwang-Bok Kim,Tong-Yul Cho,Nikolay S. Sochogov,Alexender N. Zakharov 한국표면공학회 2002 한국표면공학회지 Vol.36 No.1
Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density (~10¹?m?³) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was used to examine DLC films produced at low (Usub<1 ㎸) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of Ec = 100 eV. In spite of rather high percentage of sp3-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film. also thought to decrease its adhesion.
Konstantin V. Oskomov,Hui-Gon Chun,Tong-Yul Cho,Nikolay S. Sochugov,Yong-Zoo You 한국진공학회(ASCT) 2002 Journal of Korean Vacuum Science & Technology Vol.6 No.4
Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters for obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-㎜ thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.
Chun, Hui-Gon,Oskomov, Konstantin V.,Sochugov, Nikolay S.,Lee, Jing-Hyuk,You, Yong-Zoo,Cho, Tong-Yul The Korean Society Of Semiconductor Display Techno 2003 한국반도체장비학회지 Vol.2 No.1
Plasma generator based on non-self-sustained low-pressure arc discharge has been examined as a tool for deposition of highly-adhesive hydrogenated amorphous diamond-like carbon(DLC) films. Since the discharge is stable in wide range of gas pressures and currents, this plasma source makes possible to realize both plasma-immersion ion implantation(PIII) and plasma-immersion ion deposition(PIID) in a unified vacuum cycle. The plasma parameters were measured as functions of discharge current. Discharge and substrate bias voltage parameters have been determined for the PIII and PIID modes. For PIID it has been demonstrated that hard and well-adherent DLC coating are produced at 200-500 eV energies per deposited carbon atom. The growth rates of DLC films in this case are about 200-300 nm/h. It was also shown that short(∼60$\mu\textrm{s}$) high-voltage(> 1kV) substrate bias pulses are the most favorable for achieving high hardness and good adhesion of DLC, as well as for reducing of residual intrinsic stress are.
Surface Morphology, Microstructure and Mechanical Properties of Thin Ag Films
Shugurov, Artur,Panin, Alexey,Chun, Hui-Gon,Oskomov, Konstantin The Korean Powder Metallurgy Institute 2003 한국분말재료학회지 (KPMI) Vol.10 No.3
Thin Ag films deposited onto $SiO_2/Si$ substrates by DC magnetron sputtering and thereafter annealed ,it temperatures 100-50$0^{\circ}C$ are investigated by scanning tunneling and atomic forte microscopy. It is shown that the film surface topography and microstructure are considerably changed as a result of annealing. To provide a quantitative estimation of the surface topography changes of Ag films the surface fractal dimension was calculated. Elasticity and hardness of the films are studied by a nanoindentation technique. The films are found to have value of elastic modulus close to that of bulk silver while their hardness and yield stress are essentially higher.