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MgF₂ Monoplate 보정기를 사용한 회전보정기형 타원편광분석기의 제작 및 GaAs 연구에 대한 응용
최준호,Nilesh S. Barange,Mangesh S. Diware,김태중,박재찬,김영동 한국물리학회 2014 새물리 Vol.64 No.4
We constructed a rotating compensator type ellipsometer (RCE) and applied it to the study of the optical properties of GaAs. In this work, a MgF₂ monoplate retarder was incorporated into the RCE system to avoid the disadvantages of biplates and Berek plates and a photomultiplier tube (PMT) detector was used to effectively detect the signal of light. To demonstrate the high-precision capability of our home made RCE, we present the dielectric function and the critical point (CP) analysis results for GaAs, and we compare the data with those measured by using conventional ellipsometers. This work show that our home made RCE can resolve several CPs near the E₂ CP at room-temperature, which connot be done using conventional ellipsometers. 본 연구에서는 회전보정기형 타원편광분석기 (Rotating Compensator Ellipsometer, RCE) 를 제작하고 제작된 RCE 를 GaAs 의 광특성 연구에 적용하였다. Biplate (복층구조) 와 Berek plate 보정기의 단점들을 피하기 위하여 MgF₂ monoplate (단층구조) 보정기가 사용되었고, 효과적으로 빛의 신호를 검출하기 위하여 광전자증배관 (photomultiplier tube) 검출기가 사용되었다. 고정밀 측정정밀도를 확인하기 위해서 GaAs 의 유전율 함수를 측정하고, 전이점들을 분석 하였으며, 기존의 타원편광분석기를 통해 얻어낸 결과와 비교하였다. 그 결과 기존의 타원편광분석기들로는 분리가 불가능한 E 전이점 영역 부근의 전이점들을 상온에서 분석할 수 있었다.
Temperature Dependence of the Dielectric Function and Critical-point Energies of InAs
김태중,황순용,Jun Seok Byun,Nilesh S. Barange,Jun Young Kim,김영동 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.1
We report the complex dielectric function of InAs for energies from 0.74 to 6.54 eV and temperatures from 22 to 675 K. The complex dielectric function was determined by using spectroscopic ellipsometry. The critical-point (CP) structures at low temperatures are blue-shifted and are sharpened significantly relative to those observed at high temperatures, which can be explained by using the reduction of the electron-phonon interaction and the thermal expansion. The CP energies are determined by using lineshape fittings to numerically calculated second energy derivatives of the dielectric function. The obtained CP energies are fit to a phenomenological expression that contains the Bose-Einstein statistical factor and to a linear equation.
김태중,황순용,최준호,Han Gyeol Park,변준석,Nilesh S. Barange,김영동 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.5
We report the dielectric function from 0.74 to 6.42 eV of hexagonal GaN at 26 K, along with the energies of its <I>E</I><SUB>0</SUB> exciton and critical point. The GaN sample is a 1.9 µm thick film deposited on a c-plane (0001) sapphire substrate by using molecular beam epitaxy. Data were obtained with a rotating-compensator spectroscopic ellipsometer. B-splines in a multilayer-structure calculation were used to extract the optical properties of the film. The 26 K <I>E</I><SUB>0</SUB> excitonic and critical-point structures were significantly blue-shifted and were sharpened relative to their room-temperature equivalents.
Temperature dependence of the critical points of monolayer MoS2 by ellipsometry
Park, Han Gyeol,Kim, Tae Jung,Kim, Hwa Seob,Yoo, Chang Hyun,Barange, Nilesh S.,Le, Van Long,Kim, Hyoung Uk,Senthilkumar, Velusamy,Le, Chinh Tam,Kim, Yong Soo,Seong, Maeng-Je,Kim, Young Dong Taylor Francis 2016 Applied spectroscopy reviews Vol.51 No.7