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MOCVD법에 의한 광 통신용 1.55㎛ PBH-DFB 레이저 다이오드 제작
오환술,김중연,전현성,강명구 건국대학교 산업기술연구원 1997 건국기술연구논문지 Vol.22 No.-
DC-PBHDFB LD operating at 1.55㎛ were fabricated by 3-step MOCVD process. The first-order grating with 2370Å period and 700Å etching depth was formed by holographic lithography and wet etching. Fabricated DCPBH-DFB LD operates in single longitudinal mode with side-mode suppression of more than 35dB and the lasing wavelength of 1.547㎛ at room temperature and 5mW, and the lasing threshold current and the slope efficiency were 15.6mA and 0.15mW/mA, respectively. The characteristic temperature of threshold current(To) and the temperature dependence of the lasing wavelength were obtained 57.3K and 1.0Å/℃ from the DFB laser between 20℃ and 70℃, respectively.
Fe-Mn-Si 합금에서 집합조직 형성과 이에 따른 형상기억효과의 이방성
신명철,최종술,지광구,송준오,장우양 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.2
This study is aimed at investigating the anisotropy of shape memory effect in Fe-based alloy. An Fe-15Mn-3Si-4Co-5Cr alloy was cold rolled by 92%, and annealed at 630℃ for 46 min. The alloy undergoes γ→ε→α’ transformation by cold rolling and γ is restored with a major preferred orientation of (110)γ[001]γ by the annealing. The specimens for shape memory effect and tensile test were taken 0, 45, 70, 80 and 90 degs to the rolling direction. The specimen taken along 70 degs to the rolling direction exhibits the best shape memory effect. An analysis of the (110)γ[001]γ texture reveals that the specimen experiences the deformation along [221]γ which is the most expandable direction in the γ→ε transformation. In tensile test, the best SME specimen shows the lowest yield stress, indicating that the transformation take place most easily since the deformation is applied to the preferential direction to the deformation.
발광층에 2파장 재료를 갖는 백색 유기발광소자의 특성분석
강명구(Myung-Koo Kang),심주용(Ju-Yong Shim),오환술(Hwan-Sool Oh) 대한전자공학회 2008 電子工學會論文誌 IE (Industry electronics) Vol.45 No.1
본 연구에서는 발광층에 2 파장 재료를 갖는 백색 유기발광소자를 진공증착법을 사용하여 청색 발광재료인 NPB와 황색 발광재료인 Rubrene을 사용하여 제작하였다. 제작된 소자는 ITO/NPB(200Å)/NPB:Rubrene(300Å)/BCP(100Å)/Alq₃(100Å)/Al(1000Å) 구조로 하였고 Rubrene의 도핑농도는 0.75 wt%이었다. 소자의 색좌표값은 인가전압 11 V에서 x = 0.3327, y = 0.3387 로 NTSC 색좌표 순수한 백색영역(x = 0.3333, y = 0.3333)에 근접한 순수한 백색에 가까운 값을 얻었고, 이 때 최대 발광파장은 560 ㎚이었다. 소자의 동작 개시전압은 1 V이하이고 발광 개시전압은 4 V이다. 최대 외부양자효율은 인가전압 18.5 V, 전류밀도 369 ㎃/㎠ 일 때 0.457 %를 얻었다. In this paper, the white organic LED with two-wavelength was fabricated using the NPB of blue emitting material and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The structure of white OLED was ITO/NPB(200Å)/NPB:Rubrene(300Å)/BCP(100Å)/Alq₃(100Å)/Al(1000Å) and the doping concentration of Rubrene was 0.75 wt% . We obtained the white OLED with CIE color coordinates were x=0.3327 and y=0.3387, and the maximum EL wavelength of the fabricated white organic light-emitting device was 560 ㎚ at applied voltage of 11 V, which was similar to NTSC white color with CIE color coordinates of x=0.3333 and y=0.3333. The turn-on voltage is 1 V, the light-emitting turn-on voltage is 4 V. We were able to obtain an excellent maximum external quantum efficiency of 0.457 % at an applied voltage of 18.5 V and current density of 369 ㎃/㎠.
Cho Jae-Young,Oh Hwan-Sool,Myung-Koo Kang,Yoon Seok-Beom 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.6
The white-light emission of the two-wavelength method was represented by the processes of compounding new DPVBi derivatives, methyl-DPVT and nitro-DPVT, from the blue-emitting material DPVBi, after which blue light was emitted from nitro-DPVT and orange light was emitted by doping methyl-DPVT as a host material with Rubrene as a guest material. The basic structure of the fabricated organic white-light-emitting organic light-emitting device (OLED) was glass/ITO/NPB(150 A)/nitro-DPVT(100 A)/methyl-DPVT:Rubrene [2.0 wt%]/BCP(70 A)/Alq3(150 A)/Al(600 A).We evaluated the characteristics by varying the thickness of the methyl-DPVT:Rubrene layer from 100 A to 90 A to 80 A to 60 A and obtained nearly-pure white light in the Commission Internationale de l'Eclairage (CIE) coordinates (0.3175, 0.3338) in the case where the methyl-DPVT:Rubrene layer was 60-A thick. It turned out that the device remained stable against voltage changes, the turn-on voltage was 3.5 V, the light-emitting turn-on voltage was 4 V, and the external quantum eciency was more than 0.5 % for all injection currents.