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      • KCI등재

        Mechanistic analysis of sono-photolysis degradation of carmoisine

        Sankar Chakma,Vijayanand S. Moholkar 한국공업화학회 2016 Journal of Industrial and Engineering Chemistry Vol.33 No.-

        The hybrid advanced oxidation process (AOP) of sono-photolysis, in which sonication and photolysis(UV-C/H2O2) are applied simultaneously, is known to give effective degradation of several biorecalcitrantpollutants. This study has attempted to identify the links and interactions between themechanisms of individual AOPs of sonolysis and photolysis, when applied simultaneously. Experimentalresults have been analyzed concurrently with the simulations of cavitation bubble dynamics. It isrevealed that oxidizing ( OH) radicals generated through photolysis contribute mostly to degradationreactions. Due to highly sporadic nature of transient cavitation, the contribution of sonolysis todegradation is rather subordinate as compared to photolysis. Nonetheless, faster degradation and highermineralization in sono-photolysis, as compared to photolysis alone, essentially points at supportive roleof ultrasound in the hybrid AOP. Addition of electrolytes (or salt) to the reaction mixture during sonophotolysistreatment causes effective partitioning of the pollutant molecules in the interfacial region oftransient cavitation bubble, which results in further enhancement of degradation kinetics andmineralization. Although the present study has employed Carmoisine as model pollutant, themechanistic principles identified in this study, and their manifestations in terms of degradation/mineralization of pollutants are applicable to any other bio-recalcitrant pollutant.

      • KCI등재

        Synthesis of bi-metallic oxides nanotubes for fast removal of dye using adsorption and sonocatalysis process

        Sankar Chakma,Vijayanand S. Moholkar 한국공업화학회 2016 Journal of Industrial and Engineering Chemistry Vol.37 No.-

        In this study, ultrasound-assisted synthesis of bi-metallic oxides nanotubes (ZnO–TiO2 NTs) using sol–gel method followed by hydrothermal method is reported. Essentially, an attempt was made toinvestigate the simultaneous adsorption and sonocatalysis process for fast removal of dye using ZnO–TiO2 NTs. The results of characterization revealed that ZnO–TiO2 NTs were hollow nanotubular structurein shape with tube diameter of 10 nm and open ended. It has large specific surface area of 336.9 m2/g ascompared to ZnO (30.5 m2/g) and TiO2 (12.3 m2/g). The band-gap energy of NTs is 2.95 eV which is muchlower than the pure ZnO (3.18 eV) and TiO2 nanoparticles (3.15 eV). Activity of ZnO–TiO2 NTs wasassessed using decolorization process as model reaction system involving adsorption and sonocatalysisprocesses. The results were also compared with their counterparts, viz. ZnO and TiO2. Experimentalresults revealed that large specific surface area and surface charges on ZnO–TiO2 NTs promote theadsorption efficiency, while the high pore volume helps dye molecules to diffuse rapidly during thesonocatalysis process. Approximately, 97% of decolorization was achieved within 10 min of treatmentwith sonocatalysis process. These experimental results presented in this paper could form a useful toolfor further research in degradation of other bio-recalcitrant pollutants using ZnO–TiO2 NTs.

      • KCI등재

        Effect of laser incident energy on the structural, morphological and optical properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films

        Pawar, S.M.,Moholkar, A.V.,Kim, I.K.,Shin, S.W.,Moon, J.H.,Rhee, J.I.,Kim, J.H. Elsevier 2010 Current Applied Physics Vol.10 No.2

        <P><B>Abstract</B></P><P>The polycrystalline Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB> (CZTS) thin films have been prepared by pulsed laser deposition (PLD) method at room temperature. The laser incident energy was varied from 1.0 at the interval of 0.5–3.0J/cm<SUP>2</SUP>. The effect of laser incident energy on the structural, morphological and optical properties of CZTS thin films was studied by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and optical absorption. The studies reveal that an improvement in the structural, morphological and optical properties of CZTS thin films with increasing laser incident energy up to 2.5J/cm<SUP>2</SUP>. However, when the laser incident energy was further increased to 3.0J/cm<SUP>2</SUP>, leads to degrade the structural, morphological and optical properties of the CZTS thin films.</P>

      • KCI등재

        Fabrication of Fe:CdSe solar rechargeable (semiconductor–septum) storage cells

        Pawar, S.M.,Moholkar, A.V.,Rajpure, K.Y.,Kim, J.H.,Lokhande, C.D.,Bhosale, C.H. Elsevier 2009 Current Applied Physics Vol.9 No.5

        <P><B>Abstract</B></P><P>The Fe:CdSe thin films have been electrodeposited potentiostatically onto the stainless steel substrates, from non-aqueous bath containing (CH<SUB>3</SUB>COO)<SUB>2</SUB>·Cd·2H<SUB>2</SUB>O, SeO<SUB>2</SUB> and FeCl<SUB>3</SUB>. The solar rechargeable (semiconductor–septum) storage cell is fabricated with the configuration C|1M polysulphide|<I>n</I>-Fe:CdSe|stainless steel||1M FeCl<SUB>3</SUB> or 1M K<SUB>4</SUB>Fe(CN)<SUB>6</SUB>|C. The charging and discharging modes are studied and discussed. The comparison of FeCl<SUB>3</SUB> and K<SUB>4</SUB>Fe(CN)<SUB>6</SUB> based solar rechargeable storage cells, showed that FeCl<SUB>3</SUB> based storage cell is superior than that of K<SUB>4</SUB>Fe(CN)<SUB>6</SUB> based electrolyte because relatively charging time is minimum and discharging time is maximum. Thus it is concluded that the storage cell works not only as a generator but also as the storage of electricity.</P>

      • KCI등재

        Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

        Kyu Ung Sim,신승욱,A.V. Moholkar,문종하,Jae Ho Yun,김진혁 한국물리학회 2010 Current Applied Physics Vol.10 No.3

        The un-doped and Al, Ga, and In doped (3 wt.%) ZnO thin films have been prepared on glass substrates using RF magnetron sputtering at 350 ℃. The effects of these dopants on the structural, morphological,electrical, and optical properties of deposited films have been studied. XRD study showed that all doped ZnO thin films have the polycrystalline nature with hexagonal wurtzite phase having c-axis preferred out-of-plane orientation. The cross-sectional FE-SEM micrographs showed that all the films have columnar structure. AFM images showed that doped ZnO thin films have better surface smoothness than undoped ZnO thin films regardless of doping elements. The GZO thin film have the optimal electrical properties among all doped samples in terms of the carrier concentration (6.13 × 1023 cm-3), charge carrier mobility (28.2 ㎠ V-1 s-1), and a minimum resistivity (3.61 × 10-4 Ω cm). UV–Vis spectrometer results showed that all the films are highly transparent in the visible region and the band gap energy of the films varies from 3.25 eV to 3.75 eV for the different dopants. PL spectra showed the un-doped and doped ZnO thin film exhibited a violet emission in the 390–405 nm range, with different intensities, which is due to difference in concentration of zinc vacancies.

      • KCI등재

        Fabrication of Fe:CdSe solar rechargeable (semiconductor–septum) storage cells

        S.M. Pawar,A.V. Moholkar,김진혁,K.Y. Rajpure,C.D. Lokhande,C.H. Bhosale 한국물리학회 2009 Current Applied Physics Vol.9 No.5

        The Fe:CdSe thin films have been electrodeposited potentiostatically onto the stainless steel substrates, from non-aqueous bath containing (CH3COO)2 Cd 2H2O, SeO2 and FeCl3. The solar rechargeable (semiconductor-septum) storage cell is fabricated with the configuration C|1 M polysulphide|n-Fe:CdSe|stainless steel||1 M FeCl3 or 1 M K4Fe(CN)6|C. The charging and discharging modes are studied and discussed. The comparison of FeCl3 and K4Fe(CN)6 based solar rechargeable storage cells, showed that FeCl3 based storage cell is superior than that of K4Fe(CN)6 based electrolyte because relatively charging time is minimum and discharging time is maximum. Thus it is concluded that the storage cell works not only as a generator but also as the storage of electricity.

      • KCI등재

        Effect of laser incident energy on the structural, morphological and optical properties of Cu2ZnSnS4 (CZTS) thin films

        S.M. Pawar,A.V. Moholkar,I.K. Kim,신승욱,J.H. Moon,J.I. Rhee,김진혁 한국물리학회 2010 Current Applied Physics Vol.10 No.2

        The polycrystalline Cu2ZnSnS4 (CZTS) thin films have been prepared by pulsed laser deposition (PLD)method at room temperature. The laser incident energy was varied from 1.0 at the interval of 0.5–3.0 J/㎠. The effect of laser incident energy on the structural, morphological and optical properties of CZTS thin films was studied by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and optical absorption. The studies reveal that an improvement in the structural, morphological and optical properties of CZTS thin films with increasing laser incident energy up to 2.5 J/㎠. However, when the laser incident energy was further increased to 3.0 J/㎠, leads to degrade the structural,morphological and optical properties of the CZTS thin films.

      • KCI등재SCIESCOPUS

        Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

        Sim, K.U.,Shin, S.W.,Moholkar, A.V.,Yun, J.H.,Moon, J.H.,Kim, J.H. Elsevier 2010 CURRENT APPLIED PHYSICS Vol.10 No.3

        The un-doped and Al, Ga, and In doped (3wt.%) ZnO thin films have been prepared on glass substrates using RF magnetron sputtering at 350<SUP>o</SUP>C. The effects of these dopants on the structural, morphological, electrical, and optical properties of deposited films have been studied. XRD study showed that all doped ZnO thin films have the polycrystalline nature with hexagonal wurtzite phase having c-axis preferred out-of-plane orientation. The cross-sectional FE-SEM micrographs showed that all the films have columnar structure. AFM images showed that doped ZnO thin films have better surface smoothness than un-doped ZnO thin films regardless of doping elements. The GZO thin film have the optimal electrical properties among all doped samples in terms of the carrier concentration (6.13x10<SUP>23</SUP>cm<SUP>-3</SUP>), charge carrier mobility (28.2cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP>), and a minimum resistivity (3.61x10<SUP>-4</SUP>Ωcm). UV-Vis spectrometer results showed that all the films are highly transparent in the visible region and the band gap energy of the films varies from 3.25eV to 3.75eV for the different dopants. PL spectra showed the un-doped and doped ZnO thin film exhibited a violet emission in the 390-405nm range, with different intensities, which is due to difference in concentration of zinc vacancies.

      • SCIESCOPUS

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