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한성현,김주자,최민자 한국보건통계학회 2002 한국보건정보통계학회지 Vol.27 No.1
This paper was designed to examine drinking, smoking, sex behavior and the effected factors on sexual behavior among unmarried young adults in Korea. Data from a survey of 3,942 respondents of ages 15-24 in three strata (high school students, college students, and employed persons) are used. Seventy-three percent have experienced alcohol drinking, 30% have experienced smoking, and 17% have experienced sexual intercourse. Young women are much less likely to have experienced these behaviors than young men. The gender difference is notably smaller among high school students than among other youth. Multiple risk-taking behavior is common both among men and women. Logistic regression shows that young unmarried men and women who have an unmarried friend who is sexually active, who have experienced drinking, who have experienced smoking, and who have lived away from parental home are more likely to be sexually active than other unmarried young adults.
Sung, MinJae,Kim, Sang-Hyeok,Lee, Hyo-Jong,Lim, Taeho,Kim, Jae Jeong Elsevier 2019 ELECTROCHIMICA ACTA Vol.295 No.-
<P><B>Abstract</B></P> <P>Through silicon via (TSV) is one of the most important technologies in 3-dimensional wafer/chip stacking. However, there are some issues related to defect-free TSV filling and Cu pumping. In this study, a defect-free TSV filling was achieved using iodide ions. The working mechanism of iodide ions in TSV filling was systemically investigated by electrochemical measurements; It was found that the formation of CuI on the electrode surface is a key process for inhibiting Cu ion reduction. This inhibition effect of iodide ions enables defect-free TSV filling. Furthermore, the study of microstructure of the filled Cu revealed that the electrochemical reduction of CuI during the TSV filling forms small Cu grains in TSV. The small Cu grains cause Cu pumping in subsequent processes, which damages semiconductor devices. We achieved a defect-free TSV filling with enlarged Cu grains using a two-step filling method that effectively promotes the direct reduction of Cu ions rather than electrochemical reduction of CuI.</P>
Simultaneous liver-kidney transplantation: A single-center experience in Korea
Minjae Kim,Shin Hwang,Chul-Soo Ahn,Deok-Bog Moon,Tae-Yong Ha,Gi-Won Song,Dong-Hwan Jung,Sung Shin,Young Hoon Kim,Hea-Seon Ha,Jung-Ja Hong,In-Ok Kim,Duck Jong Han,Sung-Gyu Lee 한국간담췌외과학회 2020 Annals of hepato-biliary-pancreatic surgery Vol.24 No.4
Backgrounds/Aims: Simultaneous liver and kidney transplantation (SLKT) has been established as the treatment of choice for patients with concurrent end‐stage liver and end‐stage kidney diseases. The objective of this study was to analyze the nationwide incidence of SLKT in Korea and the outcomes of SLKT in a high-volume transplant center. Methods: Databases of the Korean Network for Organ Sharing (KONOS) and Asan Medical Center from 2000 to 2019 were retrospectively reviewed to determine the incidence of SLKT. Results: During 20 years from 2000 to 2019, deceased donor SLKT was performed for 38 cases in the KONOS database. The proportion of deceased donor SLKT was 0.6% (20 of 3333) before adoption of MELD score, which was significantly increased to 1.2% (18 of 1524) after the adoption of MELD score (p=0.034). In our institution, there were 11 cases of SLKT (2 cases with deceased donors and 9 cases with living donors). SLKT accounted for 0.2% (11 of 6468) of total liver transplantation volume. During follow-up, five patients died due to hepatocellular carcinoma recurrence (n=2), infection (n=2), or unknown cause (n=1). The 1-year and 10-year overall patient survival rates were 90.9% and 81.8%, respectively. Conclusions: Results of this study revealed that the incidence of deceased donor SLKT was very low. An increase of such incidence is not anticipated unless the number of deceased donors is markedly increased. Currently, sequential living donor liver transplantation and kidney transplantation with deceased or living donors are mainstays of transplantation rather than SLKT in our institution.
Bromide Ion as a Leveler for High-Speed TSV Filling
Sung, Minjae,Yoon, Young,Hong, Jinwoo,Kim, Myung Jun,Kim, Jae Jeong Electrochemical Society 2019 Journal of the Electrochemical Society Vol.166 No.13
<P>Organic levelers have been essential additives for Cu electrodeposition to achieve defect-free filling of through-silicon vias (TSVs). They selectively inhibit Cu deposition on top of TSVs, avoiding the occlusion of TSV openings and concentrating Cu deposition inside the TSVs. We recently reported that iodide ions (I<SUP>−</SUP>) can act as an inorganic leveler to induce defect-free TSV filling. However, it was found that I<SUP>−</SUP> considerably decreased the efficiency of Cu electrodeposition because of the formation of an unstable CuI suppression layer on top of the wafer. The CuI layer easily detached from the wafer, and additional electrons were consumed to reestablish the suppression layer during gap-filling. This study introduces a TSV filling process with bromide ions (Br<SUP>−</SUP>) as an alternative to I<SUP>−</SUP>. Although the suppression strength of Br<SUP>−</SUP> to Cu electrodeposition is weaker than that of I<SUP>−</SUP>, Br<SUP>−</SUP> forms a more stable suppression layer that does not reduce the efficiency of Cu electrodeposition, enabling high-speed TSVs filling. As a result, the filling rate with Br<SUP>−</SUP> was twice as fast as that with I<SUP>−</SUP> at the same applied current density; thereby TSVs 60 μm deep and 5 μm in diameter were completely filled in 500 s.</P>
Minjae Kim,Yeongseon Kim,Sung Hyeon Baeck,Sang Eun Shim 한국탄소학회 2015 Carbon Letters Vol.16 No.1
In this study, in order to improve the thermal and electrical properties of epoxy/graphene nanoplatelets (GNPs), surface modifications of GNPs are conducted using silane coupling agents. Three silane coupling agents, i.e. 2-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane (ETMOS), 3-glycidoxypropyltriethoxysilane (GPTS), and 3-glycidoxypropyltrimethoxysilane (GPTMS), were used. Among theses, GPTMS exhibits the best modification performance for fabricating GNP-incorporated epoxy composites. The effect of the silanization is evaluated using transmission electron microscopy (TEM), scanning electron microscopy, thermogravimetric analysis, and energy dispersive X-ray spectroscopy. The electrical and thermal conductivities are characterized. The epoxy/silanized GNPs exhibits higher thermal and electrical properties than the epoxy/raw GNPs due to the improved dispersion state of the GNPs in the epoxy matrix. The TEM microphotographs and Turbiscan data demonstrate that the silane molecules grafted onto the GNP surface improve the GNP dispersion in the epoxy.
Effects of Organic Additives on Grain Growth in Electrodeposited Cu Thin Film during Self-Annealing
Sung, Minjae,Kim, Hoe Chul,Lim, Taeho,Kim, Jae Jeong The Electrochemical Society 2017 Journal of the Electrochemical Society Vol.164 No.13
<P>The microstructural changes in electrodeposited Cu films during self-annealing is demonstrated in this study. The structural change is strongly influenced by the organic additives in the Cu electrodeposition. The use of either polyethylene glycol (PEG) or bis-(3-sulfopropyl)disulfide (SPS) decreases the Cu(111) grain size of deposited films, as the adsorption of the additives suppresses the surface diffusion of the Cu ions during the electrodeposition. After the electrodeposition, the average grain size of the deposited film was simultaneously increased by 10% in a self-annealing process to reduce the defect energy, which is mainly composed of the surface energy of the grains. Meanwhile, the grain grew 4 times larger than the as-deposited grain size during the self-annealing when both the PEG and SPS were introduced. The drastic grain growth was attributed to the accumulation of a high defect energy in the deposited film. The dynamic interaction between the co-adsorbed PEG and SPS on the Cu surface during the electrodeposition promotes an unoriented dispersion-type deposition, resulting in high-strain energy as well as surface energy. Releasing the strain energy accumulated by the high density of misorientation also leads to the simultaneous growth of Cu(200) grains. (c) 2017 The Electrochemical Society. All rights reserved.</P>