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Incorporation of ZnO Nanoparticles on Solution Processed Zinc Oxide Thin-Film Transistors
Miguel A. Dominguez,Javier Martinez,Karim Monfi l-Leyva,Susana Soto,Netzahualcoyotl Carlos,Mario Moreno 한국전기전자재료학회 2018 Transactions on Electrical and Electronic Material Vol.19 No.6
In this work, a simple, low-cost and reliable method for deposition of solution-processed Zinc oxide fi lms with embeddedZnO nanoparticles (np-ZnO) at low deposition temperature is presented. The np-ZnO fi lms are obtained by ultrasonic spraypyrolysis technique at 200 °C. The np-ZnO precursor solution is prepared at diff erent nanoparticles content. After deposition,the np-ZnO fi lms do not require any additional treatment. The np-ZnO fi lms were characterized by Fourier transforminfrared spectroscopy, X-ray diff raction and fi eld emission scanning electron microscope. Moreover, a comparison of ZnOand np-ZnO based thin-fi lm transistors (TFTs) is presented. The extracted fi eld-eff ect mobility was 0.01 cm 2 /Vs for ZnOTFTs and 0.05 cm 2 /Vs for np-ZnO TFTs.
Rafael A. Salinas Domínguez,Abdu Orduña-Díaz,Sonia Cerón,Miguel A. Dominguez 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.1
In this study, hafnium oxide (HfO2 ) thin fi lms were deposited by spin coating technique at diff erent low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diff raction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total refl ectance mode. The fi lms exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in thecharacterization of the HfO 2 films.
Sonia Ceron,Ovier Obregon,Abdu Orduña-Diaz,Miguel A. Dominguez 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.5
In this work, the synthesis and characterization of IGZO fi lms was carried out from the individual analysis of ZnO fi lms doped at diff erent In 3+ and Ga 3+ wt.%. The thin fi lms were obtained by solution processes at low temperature (200 °C). The fi lms were characterized by X-ray Diff raction, optical transmittance, FTIR spectroscopy and resistivity. It was found that the variation of doping aff ected the content of organic residuals in the deposited fi lms. In addition, the fabrication and characterization of Metal–Insulator–Semiconductor capacitors on plastic substrates are presented. Interestingly, there was a correlation in the hysteresis with the doping of In 3+ and Ga 3+ .