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Sonia Ceron,Ovier Obregon,Abdu Orduña-Diaz,Miguel A. Dominguez 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.5
In this work, the synthesis and characterization of IGZO fi lms was carried out from the individual analysis of ZnO fi lms doped at diff erent In 3+ and Ga 3+ wt.%. The thin fi lms were obtained by solution processes at low temperature (200 °C). The fi lms were characterized by X-ray Diff raction, optical transmittance, FTIR spectroscopy and resistivity. It was found that the variation of doping aff ected the content of organic residuals in the deposited fi lms. In addition, the fabrication and characterization of Metal–Insulator–Semiconductor capacitors on plastic substrates are presented. Interestingly, there was a correlation in the hysteresis with the doping of In 3+ and Ga 3+ .