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      • Evolutionary processes in finite populations.

        Lorenz, Dirk M,Park, Jeong-Man,Deem, Michael W Published by the American Physical Society through 2013 Physical review. E, Statistical, nonlinear, and so Vol.87 No.2

        <P>We consider the evolution of large but finite populations on arbitrary fitness landscapes. We describe the evolutionary process by a Markov-Moran process. We show that to O(1/N), the time-averaged fitness is lower for the finite population than it is for the infinite population. We also show that fluctuations in the number of individuals for a given genotype can be proportional to a power of the inverse of the mutation rate. Finally, we show that the probability for the system to take a given path through the fitness landscape can be nonmonotonic in system size.</P>

      • KCI등재

        Biliary-Pancreatic Endoscopic and Surgical Procedures in Patients under Dual Antiplatelet Therapy: A Single-Center Study

        Ahmed Abdel Samie,Michael Stumpf,Rui Sun,Lorenz Theilmann 대한소화기내시경학회 2013 Clinical Endoscopy Vol.46 No.4

        Background/Aims: Dual antiplatelet therapy has to be used for at least 1 month after placement of bare metal coronary stents and for a minimum of 1 year after placement of drug eluting stents. Because of the higher risk of bleeding, guidelines strongly recommend to delay elective surgery until dual antiplatelet therapy is ended. However, no data are available regarding the bleeding risk in patients on combined aspirin/clopidogrel therapy undergoing surgical or high-risk endoscopic procedures. Methods: We retrospectively analyzed the medical reports of patients on dual antiplatelet therapy, the patients who had to undergo emergency biliary-pancreatic surgery or endoscopic retrograde cholangiography with endoscopic sphincterotomy while in our unit between January 2009 and July 2012. Results: In our series, biliary-pancreatic surgical and endoscopic procedures were safely performed in 11 consecutive patients on dual antiplatelet therapy with no evidence of bleeding. Conclusions: In emergency, surgical and high risk endoscopic procedures may be performed in patients on dual antiplatelet therapy.

      • KCI등재

        Urinary Albumin Excretion and Vascular Function in Rheumatoid Arthritis

        Herwig Pieringer,Tobias Brummaier,Bettina Piringer,Lorenz Auer-Hackenberg,Andreas Hartl,Rudolf Puchner,Erich Pohanka,Michael Schmid 대한의학회 2016 Journal of Korean medical science Vol.31 No.3

        Rheumatoid arthritis (RA) is associated with significant cardiovascular (CV) morbidity and mortality. Increased urinary albumin excretion is a marker of CV risk. There are only few data on urinary albumin excretion in RA patients. Aim of the present study was to investigate urinary albumin excretion in RA patients and analyze, whether there is an association between urinary albumin excretion and vascular function as measured by the augmentation index (AIx). In a total of 341 participants (215 with RA, 126 without RA) urinary albumin-creatinine ratio (ACR) was determined and the AIx was measured. The Kolmogorov-Smirnov-test was used to cluster patient groups whose distributions of ACR can be considered to be equal. A crude analysis showed a median ACR of 6.6 mg/g in the RA group and 5.7 mg/g in patients without RA (P > 0.05). In order to account for diabetes (DM) we formed 4 distinct patient groups. Group 1: RA-/DM- (n = 74); group 2: RA+/DM- (n = 195); group 3: RA-/DM+ (n = 52); group 4: RA+/DM+ (n = 20). Clustering of these groups revealed two distinct patient groups: those without RA and DM, and those with either RA or DM or both. The latter group showed statistically significant higher ACR (median 8.1 mg/g) as the former (median 4.5 mg/g). We found no significant correlation between AIx and ACR. Urinary albumin excretion in patients with RA or DM or both is higher than in subjects without RA and DM. This can be seen as a sign of vascular alteration and increased CV risk in these patients.

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        Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO

        Rudiger Schmidt-Grund,Bernd Rheinlander,Evgeni M. Kaidashev,Michael Lorenz,Marius Grundmann,Daniel Fritsch,Mathias M. Schubert,Heidemarie Schmidt,Craig M. Herzinger 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

        For ZnO, the optical dielectric functions for polarizations parallel and perpendicular to the optical axis were determined in the photon energy range from 4.0 to 9.5 eV by using generalized spectroscopic ellipsometry and the band structure was calculated by means of the empirical pseudopotential method. From the band structure, a theoretical dielectric function was derived. The dielectric functions reveal features that were identied as band-to-band transitions. The energies of those transitions were assigned to band-to-band transition energies of critical points of the calculated band structure. For ZnO, the optical dielectric functions for polarizations parallel and perpendicular to the optical axis were determined in the photon energy range from 4.0 to 9.5 eV by using generalized spectroscopic ellipsometry and the band structure was calculated by means of the empirical pseudopotential method. From the band structure, a theoretical dielectric function was derived. The dielectric functions reveal features that were identied as band-to-band transitions. The energies of those transitions were assigned to band-to-band transition energies of critical points of the calculated band structure.

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        Homoepitaxial ZnO Thin Films Fabricated by Using Pulsed-Laser Deposition

        Holger von Wenckstern,Matthias Brandt,Heidemarie Schmidt,Christian Hanisch,Gabriele Benndorf,Holger Hochmuth,Michael Lorenz,Marius Grundmann 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        ZnO thin films were deposited homoepitaxially by using pulsed-laser deposition on ZnO wafers grown by using the hydrothermal method. The dominant shallow donor level in the nominally undoped thin films is AlZn, as suggested by thermal admittance spectroscopy and low temperature photoluminescence measurements. The homoepitaxial ZnO:P thin films are n-conducting in the as-grown state, which facilitates investigations by Hall effect measurements. The Hall mobility of such ZnO:P thin lms is higher than that of heteroepitaxial ZnO thin lms and its temperature dependence is similar to that of ZnO single crystals grown by seeded chemical vapor transport.

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