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Homoepitaxial ZnO Thin Films Fabricated by Using Pulsed-Laser Deposition
Holger von Wenckstern,Matthias Brandt,Heidemarie Schmidt,Christian Hanisch,Gabriele Benndorf,Holger Hochmuth,Michael Lorenz,Marius Grundmann 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
ZnO thin films were deposited homoepitaxially by using pulsed-laser deposition on ZnO wafers grown by using the hydrothermal method. The dominant shallow donor level in the nominally undoped thin films is AlZn, as suggested by thermal admittance spectroscopy and low temperature photoluminescence measurements. The homoepitaxial ZnO:P thin films are n-conducting in the as-grown state, which facilitates investigations by Hall effect measurements. The Hall mobility of such ZnO:P thin lms is higher than that of heteroepitaxial ZnO thin lms and its temperature dependence is similar to that of ZnO single crystals grown by seeded chemical vapor transport.