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Kim,Bae Yong,Kim,Hyun Ha,Choi,Yoon Ho,Hong,Chang Hee,Satyanarayan,M. N.,Yoo,Tae Kyung 대한전자공학회 1997 ICVC : International Conference on VLSI and CAD Vol.5 No.1
A detailed investigation on the structural property of GaN epilayers grown on (0001) sapphire is performed by means of high resolution XRD, TEM, and RBS in channeling condition. In order to obtain a better assessment of the edge dislocation (1/3$lt;11-20$gt;) lying along [0001] direction in the heavily mismatched GaN/(0001)Al₂O₃ system, Φ-scan method using high resolution XRD about (10-12) plane is performed on GaN samples with thickness varying from 1.41㎛ to 4.21㎛.