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RISS 인기검색어
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- 저자 : M. Khizar (검색결과 3 건)
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Khizar-ul Haq,Liu Shan-peng,M.A. Khan,X.Y. Jiang,Z.L. Zhang,Jin Cao,W.Q. Zhu 한국물리학회 2009 Current Applied Physics Vol.9 No.1
We demonstrated efficient red organic light-emitting diodes based on a wide band gap material 9,10-bis(2-naphthyl)anthracene (ADN) doped with 4-(dicyano-methylene)-2-t-butyle-6-(1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA)/ N,N'-bis(naphthalene-1-yl)-N,N0-diphenyl-benzidine (NPB)/[ADN:Alq3]:DCJTB:C545T/Alq3/LiF/Al. It was found that C545T dopant did not by itself emit but did assist the energy transfer from the host (ADN) to the red emitting dopant via cascade energy transfer mechanism. The OLEDs realized by this approach significantly improved the EL efficiency. We achieved a significant improvement regarding saturated red color when a polar co-host emitter (Alq3) was incorporated in the matrix of [ADN:Alq3]. Since ADN possesses a considerable high electron mobility of 3.1 × 10-4 ㎠ V-1 s-1, co-host devices with high concentration of ADN (>70%) exhibited low driving voltage and high current efficiency as compared to the devices without ADN. We obtained a device with a current efficiency of 3.6 cd/A, Commission International d’Eclairage coordinates of [0.618, 0.373] and peak λmax = 620 nm at a current density of 20 mA/㎠. This is a promising way of utilizing wide band gap material as the host to make red OLEDs, which will be useful in improving the electroluminescent performance of devices and simplifying the process of fabricating full color OLEDs. We demonstrated efficient red organic light-emitting diodes based on a wide band gap material 9,10-bis(2-naphthyl)anthracene (ADN) doped with 4-(dicyano-methylene)-2-t-butyle-6-(1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10(2-benzothiazolyl)quinolizine-[9,9a,1gh]coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA)/ N,N'-bis(naphthalene-1-yl)-N,N0-diphenyl-benzidine (NPB)/[ADN:Alq3]:DCJTB:C545T/Alq3/LiF/Al. It was found that C545T dopant did not by itself emit but did assist the energy transfer from the host (ADN) to the red emitting dopant via cascade energy transfer mechanism. The OLEDs realized by this approach significantly improved the EL efficiency. We achieved a significant improvement regarding saturated red color when a polar co-host emitter (Alq3) was incorporated in the matrix of [ADN:Alq3]. Since ADN possesses a considerable high electron mobility of 3.1 × 10-4 ㎠ V-1 s-1, co-host devices with high concentration of ADN (>70%) exhibited low driving voltage and high current efficiency as compared to the devices without ADN. We obtained a device with a current efficiency of 3.6 cd/A, Commission International d’Eclairage coordinates of [0.618, 0.373] and peak λmax = 620 nm at a current density of 20 mA/㎠. This is a promising way of utilizing wide band gap material as the host to make red OLEDs, which will be useful in improving the electroluminescent performance of devices and simplifying the process of fabricating full color OLEDs.
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Surface analysis of GeC prepared by reactive pulsed laser deposition technique
Arshad Mahmood,A. Shah,F.F. Castillon,L. Cota Araiza,J. Heiras,M. Yasin Akhtar Raja,M. Khizar 한국물리학회 2011 Current Applied Physics Vol.11 No.3
Amorphous germanium carbide (a-Ge_(1-x)C_x) thin films were prepared by reactive pulsed laser deposition technique using several methane pressures. Surface analysis was performed by X-ray photoelectron spectroscopy (XPS) to examine the composition and elemental bonding at the surface of the material. Optical analysis was carried out by spectroscopic ellipsometry to study the optical constants (n and k) and other parameters of the film. Results indicate that the carbon atoms to be incorporated in the germanium lattice, forming a-Ge_(1-x)C_x alloy, for concentrations below about 10 atomic % where the Ge atoms are uniformly distributed. There is formation of graphitic agglomerates for higher carbon concentrations.
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Ion beam analysis of sputtered AlN films
Arshad Mahmood,E. Andrade,S. Muhl,A. Shah,M. Khizar,M. Yasin Akhtar Raja 한국물리학회 2011 Current Applied Physics Vol.11 No.2
Polycrystalline aluminium nitride (AlN) films have been prepared by DC reactive magnetron sputtering followed by its characterization using advance electronic and optical techniques. Film quality has been optimized mainly using deposition parameters. Rutherford backscattering spectroscopy (RBS) and nuclear interaction (NR) techniques were used to analyze the film density (atoms/cm^3), elemental composition and impurities of the grown film. Our ion beam analysis (IBA) was based on the particle energy spectra bombarded with a low-energy deuterium beam. The corresponding linear thickness of the film was measured using a profilometer. X-Ray diffraction, spectroscopic ellipsometry and atomic force microscope have also been employed to reinforce the results. We found that highly dense and stoichiometric films can be obtained at higher plasma current. Under optimal deposition conditions, the film densities of ∼2.45 g/cm^3, FWHM ∼0.125 and the surface roughness ∼6.758 nm have been achieved successfully.
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