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        Shear-strain induced structural relaxation of Cu Σ3 [110](112) symmetric tilt grain boundary: The role of foreign atoms and temperature

        Li Yang,Xue Hongtao,Zhou Xin,Tang Fuling,Li Xiuyan,Ren Junqiang,Lu Xuefeng 한국물리학회 2021 Current Applied Physics Vol.28 No.-

        Grain boundaries (GBs) relaxation is a promising and effective strategy to improving GB stability or stabilizing nanocrystalline metals. However, previous studies mainly focused on nanocrystalline pure metals and GB behaviors therein, without considering the role of foreign atoms such as impurity or alloying atoms in GB relaxation. In this work, the shear-strain induced structural relaxation of pure Cu Σ3 [110](112) symmetric tilt GBs (STGBs), and the effects of foreign elements (Fe and Ni) and temperature on the GB relaxation were investigated in detail by molecular dynamics method. The results show that shear strain can trigger the structural relaxation of pure, Fe- and Ni-containing Cu GBs by the emission of Shockley partial dislocations from Cu GBs. Both Fe and Ni have impediment effects on the shear-strain induced GB relaxation, though the content of Fe or Ni atom (0.00165 at.%) is quite low in the GB model. The temperature cannot trigger GB relaxation independently within the considered temperature range, but play a positive role in the shear-strain induced structural relaxations of pure, Fe- and Ni-containing Cu Σ3 [110](112) STGBs. Our work might gain new insights into the mechanically induced GB relaxation in nanocrystalline copper and could be beneficial for improving the stability of Cu GBs.

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        An Improved Generalized Finite Element Method for Electrical Resistance Tomography Forward Model

        Bo Li,Jian Ming Wang,Qi Wang,Xiaojie Duan,Xiuyan Li 대한전기학회 2019 Journal of Electrical Engineering & Technology Vol.14 No.6

        Electrical resistance tomography is a noninvasive imaging modality, where imperceptible currents are applied to the skin and the resulting surface voltages are measured. It has the potential to be of great value in industrial applications. One of the major problem of forward problem is its low efciency of fnite element computation in electrical resistance tomography and high demand in computational cost for industrial application. An advanced approach is proposed by generalizing the fnite element method frstly and then using PSO-SA algorithm to optimize the topology of FE model. Compared with conventional FEM or normal GFEM, a smaller number of nodes and elements with the proposed approach are required to achieve the same accuracy. The novelty of this paper relies on the frst to generalize the fnite mesh and optimize its topology in accordance with dissection results. Experiments from both simulation and prototype results demonstrate that it is capable of achieving better accuracy using less computational cost with the proposed approach

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