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ICP Source를 이용한 저온 증착 a-SiNx:H 특성 평가
강성칠,이동혁,소현욱,장진녕,홍문표,권광호,Kang, Sung-Chil,Lee, Dong-Hyeok,So, Hyun-Wook,Jang, Jin-Nyoung,Hong, Mun-Pyo,Kwon, Kwang-Ho 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.7
The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.