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RISS 인기검색어
- 검색키워드
- 저자 : Kuidong Kim (검색결과 3 건)
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Analysis of the IGBT with improved trade-off characteristic between conduction and turn-off losses
Samuell Shin,Jongil Won,Kuidong Kim,Jongki Kwon,Yongseo Koo 대한전자공학회 2008 ITC-CSCC :International Technical Conference on Ci Vol.2008 No.7
In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/㎠) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.
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The Design of DC-DC Converter with DTMOS Switch
Yongseo Koo,Kasan Ha,Kwangyeob Lee,Jaechang Kwak,Kuidong Kim,Jongki Kwon 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
The high efficiency power management IC(PMIC) with switching device is presented in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS(Dynamic Threshold voltage MOSFET) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DTMOS drops as the gate voltage increases, resulting in a much higher current handling capability than standard MOSFET. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Sawtooth generator is made to have 1.2 ㎒ oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70㏈ DC gain and 64° phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low onresistance switching device, achieved the high efficiency near 95% at 100㎃ output current.
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A Low-Voltage-Triggering-Dual-directional SCR Device for ESD Protection
Kwangyeob Lee,Jungman Son,Yongseo Koo,Jaechang Kwak,Kuidong Kim,Jongki Kwon 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
A low-voltage triggering dual-directional silicon controlled rectifier(SCR) device for ESD Protection of advanced low voltage CMOS application was proposed and studied using numerical simulation. The device is capable of providing effective protection for ICs against ESD stresses in the two opposite directions without division of anode and cathode) and the device has area efficiency. Comparing with the conventional dualdirectional SCR, the proposed device has low trigger voltage than conventional device because of added NMOS structure inside proposed device. In the simulation result, the triggering voltage of the device is 6V~9V and the holding voltage is 2.2V~ 4.2V with variation of design parameter, respectively. And the device has same robustness compared to conventional one.
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