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- 저자 : Kasan Ha (검색결과 2 건)
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The Design of DC-DC Converter with DTMOS Switch
Yongseo Koo,Kasan Ha,Kwangyeob Lee,Jaechang Kwak,Kuidong Kim,Jongki Kwon 대한전자공학회 2008 ICEIC:International Conference on Electronics, Inf Vol.1 No.1
The high efficiency power management IC(PMIC) with switching device is presented in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS(Dynamic Threshold voltage MOSFET) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DTMOS drops as the gate voltage increases, resulting in a much higher current handling capability than standard MOSFET. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Sawtooth generator is made to have 1.2 ㎒ oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70㏈ DC gain and 64° phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low onresistance switching device, achieved the high efficiency near 95% at 100㎃ output current.
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The novel high voltage IGBT with improved on-resistance and turn-off characteristics
Mankoo Lee,Samuell Shin,Kasan Ha,Kangyoon Lee,Yongseo Koo 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
In this paper, the novel 2.5KV IGBT incorporating an n-type MOSFET between adjacent cells is proposed with the aim of the improving the tradeoff relation between switching time and conduction loss. The incorporated MOSFET provides an additional base current that led to the increase of collector current of IGBT and the decrease of the on-state voltage drop. Also, the turn-off time and the static latch-up susceptibility are decreased because of the P+ region of the incorporated MOSFET, In the experimental result, with incorporating an n-type MOSFET, the turn-off time and on-state voltage drop are decreased by approximately 8% and 15% respectively, compared to a conventional IGBT. And the proposed IGBT provides higher latching current of 39% than conventional IGBT.
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