마이크로센서 응용을 위한 실리콘 미세가공 기술

고희선,김영민,권대혁,도양회,이광만 濟州大學校 産業技術硏究所 1999 산업기술연구소논문집 Vol.10 No.2

Silicon micromachining technology can be used to build microsensors and actuators by using tools derived from standard IC processing. For the silicon micromachining the etching characteristics of tetramethyl ammonium hydroxide (TMAH) by dissolving silicon powder or silicic acid have been studied. The 3. 5 and l0wt.% TMAH solutions, with dissolved silicon powder (6g/l) or with dissolved silicic acid(Si(OH)_(4), 16g/1) were used. And ammonium peroxydisulfate (APODS. 2g/l) dissolved in the solutions were also used. The etch rates of silicon and the etched surface roughness were observed with various etching conditions. The crystallographical aspect on the crystal orientation of silicon have been studied. With sufficiently fresh solutions, these TMAH concentration and combination of etchants. provide repeatable etch properties. does not attack exposed aluminum or silicon dioxode. and provide smooth (100) silicon surfaces.

RTA 방법에 의한 Ti-실리사이드 형성과 그 특성

高正大,李光萬,崔致圭,洪性樂 제주대학교 1990 논문집 Vol.30 No.-

A rapid thermal annealing (RTA) apparatus capable of controlling the radiation power density were designed. The titanium silicide grown from thin film Ti (400Å)/Si(111) and TiSi₂.?(700Å)/Si(111) system was processed in an argon ambient by RTA apparatus at the temperature range of 450℃ to 950℃ for 5 to 60 second. The processed specimens had been charaterized by XRD, SEM and AES. From the XRD spectra the phases of the titanium silicides had been changed from Ti?Si₄to TiSi and then TiSi₂by increasing the annealing temperature. XRD and AES results showed that the phase of Ti-silicides was C54 TiSi₂ at annealing temperature of 850℃ for 30 second. The phase of titanium silicides were confirmed by the line shape Si L₂,₃VV and Ti L₃M₂,₃M₂,₃ Auger spectra.

마이크로센서 응용을 위한 실리콘 미세가공 기술

고희선,김영민,권대혁,도양희,이광만 제주대학교 산업기술연구소 1999 尖端技術硏究所論文集 Vol.10 No.2

Silicon micromachining technology can be used to build microsensors and actuators by using tools derived from standard IC processing. For the silicon micromachining the etching characteristics of tetramethyl ammonium hydroxide (TMAH) by dissolving silicon powder or silicic acid have been studied. The 3, 5 and 10wt.% TMAH solutions, with dissolved silicon powder (6g/l) or with dissolved silicic acid(Si(OH)4, 16g/l) were used. And ammonium peroxydisulfate (APODS, 2g/l) dissolved in the solutions were also used. The etch rates of silicon and the etched surface roughness were observed with various etching conditions. The crystallographical aspect on the crystal orientation of silicon have been studied. With sufficiently fresh solutions, these TMAH concentration and combination of etchants, provide repeatable etch properties, does not attack exposed aluminum or silicon dioxode, and provide smooth (100) silicon surfaces.

CVD 다이아몬드 박막의 열전도 특성

이광만,고정대,최치규 제주대학교 산업기술연구소 2001 尖端技術硏究所論文集 Vol.12 No.1

Diamond has outstanding thermal properties that make it the material of choice for heat spreading applications in microelectronic devices. In order to asses thermal properties of diamond films grown by microwave plasma CVD method, we have applied an ac thermal conductivity measurement technique where films are thermally excited at frequency w while the thermal response is measured at the third harmonic via a lock-in amplifier. This method is insensitive to errors due thermal noise. Before the application to diamond, the measurement technique was tested on fused silica and sapphire. The results were in good agreement with published values. The thermal conductivity of CVD diamond films were measured to be around 3 W/cm·K.

실리콘 미세가공 기술을 이용한 마이크로 진공 센서

이광만,고성택,김영민,고희선 濟州大學校 産業技術硏究所 1998 산업기술연구소논문집 Vol.9 No.1

A micro-vacuum sensor has been fabricated by using silicon micromachining techniques and platinum thin film. NON insulator was deposited by LPCVD and APCVD methods. The insulator diaphragm was fabricated by silicon anisotropic etching in TMAH solution. Thin film platinum heater and temperature detector were deposited by rf sputtering method and patterning was performed by means of lift-off method. Deposited platinum heater and temperature detector have been shown a linear I-V characteristics. TCR( temperature coefficient of resistance) of thin film platinum heater and temperature detector was about 0.0042/℃. Fabricated vacuum sensor was measured in the range of 1X 10^(-3) Torr to 1X10^(2) Torr. and shows a good linear operating characteristics in the range of 1x1^(-2) Torr에서 1X10^(0) Torr.

히터를 내장한 고온 산소센서의 개발(Ⅱ)

이광만,고성택 경북대학교 센서기술연구소 1994 연차보고서 Vol.1994 No.-

반도체 공정기술과 마이크로머시닝 기술을 활용하여 히터가 내장된 고온 산소센서를 개발하였다. 얇은 절연막다이아프램 위에 백금히터와 온도감지기를 내장시켜 0.6와트의 작은 전력으로 약 800℃ 의 온도를 얻었다. 고주파 반응성 스퍼터링법으로 형성된 이트리아로 안정화된 지르코니아(YSZ)박막을 고체전해질로 사용하였다. 제조된 산소센서는 산소함량이 0에서 18몰%의 범위 내에서 전류구동법으로 동작하여 음극영역의 감도는 -3.65㎂/pO_2의 양호한 선형성을 보였으며 2초 이내의 빠른 응답을 보였다. A high temperature oxygen sensor has been developed using micromachining techniques and microelectronic fabrication technology. It is possible to have temperature 800℃ using on-chip platinum heater and temperature detector on the thin insulating diaphragm with applying 0.6 watts. The YSZ thin films as solid electrolyte were deposited by reactive RF suputtering method. The fabricated oxygen sensors have been shown a semi-logarithmic relationship between the oxygen content and current from the measurement within 0 to 18 mol% of the oxygen contents. The sensitivity and response time of the oxygen sensor were -3.65㎂/pO_2 and less than 2 seconds, respectively.

히터를 내장한 고온 산소센서의 개발

이광만,고성택 경북대학교 센서기술연구소 1993 연차보고서 Vol.1993 No.-

마이크로머시닝 기술과 반도체 공정기술을 활용하여 히터가 내장된 고온 산소센서를 개발하였다. 얇은 실리콘 다이아프램 위에 백금히터와 온도감지기를 내장시켜 작은 전력으로 구동되고 on-site 온도측정이 가능하였다. 약 2와트 부근의 전력에서 약 800℃의 온도를 얻었다. 고주파 반응성 스퍼터링법으로 형성된 이트리아가 약 8몰%가 함유된 지르코니아(YSZ)박막을 고체전해질로 사용하였다 제조된 산소센서는 산소함량이 0에서 18몰%의 범위 내에서 산소함량과 측정전류의 상관관계가 직선적인 응답 특성을 보였다. A high temperature oxygen sensor is developed using micromachining techniques and microelectronic fabrication technology. It is possible to have low power diriving and on-site temperature measurement due to the on-chip platinum heater and temperature detector on the thin silicon diaphragm. The sensor can be operated up to 800℃ and require about two watts power. The YSZ thin films as a solid electrolyte were deposited by reactive suputtering method with the target (8mol% of Y-2O_3 in the ZrO^2). The fabricated oxygen sensors have been shown a linear relationship between the oxygen content and the current from the measurement within 0 to 18 mol% of the oxygen contents.

CVD 다이아몬드 박막의 열전도 특성

이광만,고정대,최치규 濟州大學校 産業技術硏究所 2001 산업기술연구소논문집 Vol.12 No.1

Diamond has outstanding thermal properties that make it the material of choice for heat spreading applications in microelectronic devices. In order to asses thermal properties of diamond films grown by microwave plasma CVD method. we have applied an ac thermal conductivity measurement technique where films are thermally excited at frequency ω while the thermal response is measured at the third harmonic via a lock-in amplifier. This method is insensitive to errors due thermal noise. Before the application to diamond. the measurement technique was tested on fused silica and sapphire. The results were in good agreement with published values. The thermal conductivity of CVD diamond films were measured to be around 3 W/cm·K.

실리콘 미세가공 기술을 이용한 마이크로 진공 센서

이광만,고성택,김영민,고희선 濟州大學校 工科大學 産業技術硏究所 1998 尖端技術硏究所論文集 Vol.9 No.1

A micro-vacuum sensor has been fabricated by using silicon micromachining techniques and platinum thin film. NON insulator was deposited by LPCVD and APCVD methods. The insulator diaphragm was fabricated by silicon anisotropic etching in TMAH solution. Thin film platinum heater and temperature detector were deposited by rf sputtering method and patterning was performed by means of lift-off method. Deposited platinum heater and temperature detector have been shown a linear Ⅰ-Ⅴ characteristics. TCR(temperature coefficient of resistance) of thin film platinum heater and temperature detector was about 0.0042/℃. Fabricated vacuum sensor was measured in the range of 1x10­³Torr to 1×10² Torr, and shows a good linear operating characteristics in the range of 1x10­² Torr에서 1x10˚Torr.

농업구조물의 안전진단 및 개·보수 공법 선정 시스템 개발

김종옥,고만기,최진용,김기동,윤광식,김한중 公州大學校 産業開發硏究所 1998 産業開發硏究 Vol.6 No.-

A study was conducted to develope a system for safety appraisal and repair works on agricultural structures. Location, size, type, maintenance record, structural and functional problems of agricultural structures in Yedang irrigation district were surveyed. A grahpic user interface program assisting onsite field investigation of typical agricultural structural problems such as fractures and cracks of members was developed. Typical rehabilitation methods were investigated and coded for database development.