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Analysis on Degradation of Ferroelectric Memory
Sangwoo Kim,Jeonghan Kim,Soi Jeong,Kiryun Kwon,Changhyeon Han,Eunchan Park,Jiyong Yim,Been Kwak,Jiwon You,Daewoong Kwon 한국차세대컴퓨팅학회 2022 한국차세대컴퓨팅학회 학술대회 Vol.2022 No.10
Subthreshold swing degradation of ferroelectric-gate field effect transistor (FeFET) memory are analyzed through DC and fast drain current (ID)-gate voltage (VG) measurements. From the fast ID-VGs before endurance cycling, it is revealed that acceptor-like traps with millisecond-order response time mainly exist in the gate oxide of FeFETs and the traps cause the different subthreshold swing (SS) between erase and program states.