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A Method to Improve Linearity of a Variable Operating Range Transconductor
Toshio Miyazawa,Fujihiko Matsumoto,Kazufumi Kanegae,Yasuaki Noguchi 대한전자공학회 2008 ITC-CSCC :International Technical Conference on Ci Vol.2008 No.7
A transconductor using bias offset technique is known as a linear MOS transconductor. The linearity is deteriorated by nonideal factors. Major deterioration is caused by mobility degradation from an effect of vertical field. This paper proposes a linearization technique of the MOS transconductor following change of operating range. This technique improves the linearity of transconductance characteristic by adding two MOSFETs operating as resistors and a source follower to the conventional circuit.