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        Study on the ferromagnetism in Co and N doped ZnO thin films

        S. Ramasubramanian,R. Thangavel,M. Rajagopalan,A. Thamizhavel,K. Asokan,D. Kanjilal,J. Kumar 한국물리학회 2013 Current Applied Physics Vol.13 No.8

        Present investigation reports the structural, optical and magnetic properties of co-doping of Co and N ions in ZnO samples, prepared by two distinct methods. In the first method, samples are synthesized by Solegel technique in which the Co and N are co-doped simultaneously during the growth process itself. In the second case, N ions are implanted in the Co doped ZnO thin films grown by Pulsed Laser Deposition (PLD). Structural studies showed that the nitrogen implantation on Co doped ZnO samples developed compressive stress in the films. X-ray photoelectron spectroscopy confirmed the doping of Co and N in ZnO matrix. In the Resonant Raman scattering multiple LO phonons up to fifth order are observed in the (Co, N) co-doped ZnO. Photoluminescence spectra showed that there is reduction in the bandgap due to the presence of Co in the lattice and also the presence of Zn vacancies in the films. All samples showed ferromagnetic behavior at room temperature. The magnetic moment observed in the implanted films is found to be varied with the different dosages of the implanted N ions. First principle calculations have been carried out to study the possible magnetic interaction in the co-doped system. Present study shows that the ferromagnetic interaction is due to the hybridization between N 2p and Co 3d states in the (Co, N) co-doped ZnO and is very sensitive to the geometrical configurations of dopants and the vacancy in the ZnO host lattice.

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        Influence of ion implantation on depth dependent phase transition in TiO2 films, anatase nanostructures and photo-absorption behavior

        Manna Ashis K.,Joshi Shalik R.,Satpati B.,Dash P.,Chattaraj Ananya,Srivastava S.K.,Kanjilal A.,Kanjilal D.,Varma Shikha 한국물리학회 2022 Current Applied Physics Vol.43 No.-

        The present study explores the role of Ti ion implantation in structural phase transition in TiO2 thin films. Raman and TEM results reveal that after implantation Rutile phase in films increases at the expense of Anatase nanostructures. Though the as-deposited films display the presence of bigger anatase nanoparticles, after implantation, predominantly phonon confined smaller (~ 8 nm in size) anatase nanostructures are observed. GIXRD and Raman results further reflect presence of a critical fluence, 1 × 1013 ions/cm2, where the initial transformation from anatase to Rutile phase is observed. The role of Oxygen vacancies, in this transformation, has been explored here by XPS. Modifications in UV–Vis and Bandgap results show rich behavior which also reflects phase transformation at the critical fluence. Results further indicate that the phase transition gets first initiated deeper in the film and later on the surface. Interestingly, aggregation of larger Anatase nano-particles appears to be responsible for the structural transformation as observed here.

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