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Scaling of Ion Spectral Peaks in the Hybrid RPA-TNSA Region
K. F. Kakolee,M. Borghesi,M. Zepf,S. Kar,D. Doria,B. Ramakrishna,K. Quinn,G. Sarri,J. Osterholz,M. Cerchez,O. Willi,X. Yuan,P. McKenna 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.6
The role of the radiation pressure of an intense laser beam in the formation of proton and carbon spectra from thin foils is discussed. The data presented suggests that, in competition with the Target Normal Sheath Acceleration mechanism, the onset of the Light Sail (LS) region of Radiation Pressure Acceleration can be obtained for suitably thin targets at currently available laser intensities,. The spectral features and their scaling with the laser and target parameters are consistent with the scenario of Light Sail (LS) acceleration.
Low-voltage, high speed inkjet-printed flexible complementary polymer electronic circuits
Baeg, K.J.,Jung, S.W.,Khim, D.,Kim, J.,Kim, D.Y.,Koo, J.B.,Quinn, J.R.,Facchetti, A.,You, I.K.,Noh, Y.Y. Elsevier Science 2013 ORGANIC ELECTRONICS Vol.14 No.5
We report the development of high-performance inkjet-printed organic field-effect transistors (OFETs) and complementary circuits using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) for high-speed and low-voltage operation. Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type P(NDI2OD-T2) OFETs showed high field-effect mobilities of 0.1-0.4cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP> and low threshold voltages down to 5V. These OFET properties were modified by changing the blend ratio of P(VDF-TrFE) and PMMA. The optimum blend - a 7:3wt% mixture of P(VDF-TrFE) and PMMA - was successfully used to realize high-performance complementary inverters and ring oscillators (ROs). The complementary ROs operated at a supplied bias (V<SUB>DD</SUB>) of 5V and showed an oscillation frequency (f<SUB>osc</SUB>) as high as ~80kHz at V<SUB>DD</SUB>=30V. Furthermore, the f<SUB>osc</SUB> of the complementary ROs was significantly affected by a variety of fundamental parameters such as the electron and hole mobilities, channel width and length, capacitance of the gate dielectrics, V<SUB>DD</SUB>, and the overlap capacitance in the circuit configuration.
Suzuki, T.,Bhang, H.,Franklin, G.,Gomikawa, K.,Hayano, R.S.,Hayashi, T.,Ishikawa, K.,Ishimoto, S.,Itahashi, K.,Iwasaki, M.,Katayama, T.,Kondo, Y.,Matsuda, Y.,Nakamura, T.,Okada, S.,Outa, H.,Quinn, B. Elsevier 2004 Physics letters: B Vol.597 No.3
<P><B>Abstract</B></P><P>We have measured the proton energy distribution from the <SUP>4</SUP>He(stopped <SUP>K−</SUP>,p) reaction by means of time-of-flight. A mono-energetic peak was observed, which is interpreted as the formation of a new kind of neutral tribaryon S<SUP>0</SUP>(3115) with isospin T=1 and strangeness S=−1. The mass and width of the state were deduced to be 3117.0−4.4+1.5MeV/<SUP>c2</SUP> and <21MeV/<SUP>c2</SUP>, respectively. The state mainly decays into ΣNN.</P>