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[REGULAR PAPERS] High Dose 60Co r-Ray Irradiation of W/GaN Schottky Diodes
Jihyun Kim,F.Ren,D.Schoenfeld,S.J.Pearton,A.G.Baca,R.D.Briggs 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.2
W/n-GaN Schottky diodes were irradiated with 6UCO y-rays to doses up to 315Mrad. The barrier height obtained from current-voltage (1- V) measurements showed minimal change from its estimated initial value of -O.4eV over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at 500°C increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of y-rays, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.
Jihyun R. Kim,Eunsung Kan 한국공업화학회 2015 Journal of Industrial and Engineering Chemistry Vol.21 No.1
Heterogeneous photo-Fenton oxidation using CdS/multi-walled carbon nanotube-TiO2 (CdS/MWCNTTiO2)under visible light relied on combination of the photocatalytic, photo-Fenton and photosensitizingoxidation. The photo-Fenton reactions resulted in much faster and higher removal ofmethylene blue and total organic carbon than the dark Fenton oxidation and the photocatalyticdegradation alone at the selected conditions. The optimummolar ratio of [methylene blue]:[H2O2]:[Fe3+](1:12:3.4) in the photo-Fenton oxidation indicated cost-effectiveness of the process. The scavengingtests of the hydroxyl radicals and the valence holes suggested that the hydroxyl radical-driven oxidationwas the major step among the multiple reactions in the photo-Fenton oxidation.
Inner Warm Disk of ESO H<i>α</i>279a Revealed by NA i and CO Overtone Emission Lines
Lyo, A-Ran,Kim, Jongsoo,Lee, Jae-Joon,Kim, Kyoung-Hee,Kang, Jihyun,Byun, Do-Young,Mace, Gregory,Sokal, Kimberly R.,Park, Chan,Chun, Moo-Young,Oh, Heeyoung,Yu, Young Sam,Oh, Jae Sok,Jeong, Ueejeong,Kim American Astronomical Society 2017 The Astrophysical Journal Vol.844 No.1
<P>We present an analysis of near-infrared, high-resolution spectroscopy toward the flat-spectrum young stellar object (YSO) ESO H alpha 279a (similar to 1.5M(circle dot)) in the Serpens star-forming region at a distance of 429 pc. Using the Immersion GRating INfrared Spectrometer (IGRINS; R approximate to 45,000), we detect emission lines originating from the accretion channel flow, jet, and inner disk. Specifically, we identify hydrogen Brackett series recombination, [Fe II], [Fe III], [Fe IV], Ca I, Na I, H-2, H2O, and CO overtone emission lines. By modeling five bands of CO overtone emission lines and the symmetric double-peaked line profile for Na I emission lines, we find that ESO H alpha 279a has an actively accreting Keplerian disk. From our Keplerian disk model, we find that Na I emission lines originate between 0.04 and 1.00 au, while the CO overtone emission lines are from the outer part of the disk, in the range between 0.22 and 3.00 au. The model reveals that the neutral atomic Na gas is a good tracer of the innermost region of the actively accreting disk. We derive a mass accretion rate of 2-10 x 10-7 Me yr(-1). from the measured Br gamma emission luminosity of 1.78(+/- 0.31) x 10(31) erg s(-1).</P>
KIM, HOIKYUNG,KIM, HAEYOUNG,BANG, JIHYUN,BEUCHAT, LARRY R.,RYU, JEE-HOON International Association for Food Protection 2010 Journal of food protection Vol.73 No.7
<P>Studies were done to determine whether calcium hypochlorite (Ca(OCl)2) and chlorine dioxide (ClO2) treatment followed by drying had a synergistic killing effect on microorganisms on radish seeds intended for sprout production. Uninoculated radish seeds and seeds inoculated with Escherichia coli O157:H7 were treated with water, Ca(OCl)2 (free chlorine concentrations of 50 or 200 μg/ml), or ClO2 (50 or 200 μg/ml) for 5 min and subsequently dried at 25°C for up to 24 h. Populations of total aerobic bacteria (TAB), molds and yeasts (MY), and E. coli O157:H7 on the seeds treated with Ca(OCl)2 were not significantly different (P = 0.05) than populations on seeds treated with ClO2 at the same concentrations. However, populations of microorganisms on seeds treated with ClO2 decreased more rapidly during drying. Treatment with ClO2 (200 μg/ml) followed by drying caused reductions in TAB, MY, and E. coli O157:H7 of 3.1, 2.0, and 3.8 log CFU/g, respectively. When seeds were treated with water, Ca(OCl)2 (50 or 200 μg/ml), and ClO2 (50 μg/ml) and subsequently dried, reductions in TAB, MY, and E. coli O157:H7 were 0.2 to 2.0, 0.4 to 2.0, and 1.4 to 2.2 log CFU/g, respectively. Results indicate that inactivation of E. coli O157:H7 on radish seeds is greater after treatment with ClO2 followed by drying than after treatment with Ca(OCl)2 followed by drying, thus providing a synergistic treatment combination for reducing the safety risk associated with sprouts produced from these seeds.</P>
Kim, Tae-Hwan,Kang, Shin-Hyun,Doe, Changwoo,Yu, Jihyun,Sim, Jun-Bo,Kim, Jehan,Kline, Steven R.,Choi, Sung-Min American Chemical Society 2009 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.131 No.21
<P>Self-assembly of 1D nanoparticles such as carbon nanotubes or nanorods into highly ordered superstructures using various interactions has been of great interest as a route toward materials with new functionalities. However, the phase behavior of 1D nanoparticles interacting with surrounding materials, which is the key information to design self-assembled superstructures, has not been fully exploited yet. Here, we report for the first time a new phase diagram of negatively charged 1D nanoparticle and cationic liposome (CLs) complexes in water that exhibit three different highly ordered phases, intercalated lamellar, doubly intercalated lamellar, and centered rectangular phases, depending on particle curvature and electrostatic interactions. The new phase diagram can be used to understand and design new highly ordered self-assemblies of 1D nanoparticles in soft matter, which provide new functionalities.</P>
High Dose $^{60}Co\;{\gamma}$-Ray Irradiation of W/GaN Schottky Diodes
Kim, Jihyun,Ren, F.,Schoenfeld, D.,Pearton, S.J.,Baca, A.G.,Briggs, R.D. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.2
W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.
Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes
Kim, Byung-Jae,Mastro, Michael A.,Hite, Jennifer,Eddy, Charles R.,Kim, Jihyun The Optical Society 2010 Optics express Vol.18 No.22
<P>We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.</P>
Two-Dimensional Quantum-Mechanical Modeling for Strained Silicon Channel of Double-Gate MOSFET
Kidong KIM,A. TRELLAKIS,Jihyun SEO,Ohseob KWON,R. OBERHUBER,S. BIRNER,Taeyoung WON 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1
Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires
Mastro, M. A.,Hong-Youl Kim,Jaehui Ahn,Simpkins, B.,Pehrsson, P.,Jihyun Kim,Hite, J. K.,Eddy, C. R. IEEE 2011 IEEE transactions on electron devices Vol.58 No.10
<P>An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {- 110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.</P>