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Jihoon Oh(Jihoon Oh),Jihye Oh(Jihye Oh),Dong Wook Kim(Dong Wook Kim),HyunChul Youn(HyunChul Youn),Sae-Hoon Kim(Sae-Hoon Kim),Soo In Kim(Soo In Kim),In Won Chung(In Won Chung),Kuan Shu Wang(Kuan Shu Wa 대한정신약물학회 2023 CLINICAL PSYCHOPHARMACOLOGY AND NEUROSCIENCE Vol.21 No.1
Objective: To investigate the effects of long-acting injectable 3-monthly paliperidone palmitate on the clinical and social functioning of patients with schizophrenia. Methods: This study enrolled patients with schizophrenia receiving long-acting injectable 1-monthly paliperidone palmitate for at least 4 months and who subsequently received 3-monthly paliperidone palmitate. Accordingly, 418 patients were followed up for 24 weeks. Their clinical symptoms and social functioning were measured using the Clinical Global Impression-Severity of Illness and Personal and Social Performance scales. Results: The Personal and Social Performance total score was significantly higher after 3-monthly paliperidone palmitate treatment than at baseline (baseline vs. week 24: 54.3 ± 18.0 vs. 61.0 ± 14.5 [mean ± standard deviation]; p < 0.001; Wilcoxon signed-rank test); the proportion of patients in the mildly ill group (scores 71−100) also increased significantly (baseline vs. week 24: 16.5% vs. 20.6%; p < 0.001; McNemar-Bowker test). The mean Clinical Global Impression-Severity of Illness score decreased significantly (baseline vs. week 24: 3.7 ± 1.0 vs. 3.4 ± 0.9; p < 0.001; Wilcoxon signed-rank test), as did the proportion of patients in the severely ill group (baseline vs. week 24: 4.1% vs. 2.1%; p < 0.001; McNemar-Bowker test). Conclusion: Continuous 3-monthly paliperidone palmitate treatment significantly enhances the personal and social performance of patients with schizophrenia and reduces the proportion of those with severe illness. These findings suggest that long-acting injectable antipsychotic administration at intervals longer than 1 month might improve the social functioning of and promote return to activities of daily living in patients with schizophrenia.
The Effect of Mn/Al Substitution on the Structural Stability and Magnetic Properties of Mn₃AlC
Xin-You Wang,Ping-Zhan Si,Hui-Dong Qian,Yang Yang,Hong-Liang Ge,Jihoon Park,Xin-Qing Wang,Chul-Jin Choi 한국자기학회 2019 Journal of Magnetics Vol.24 No.1
The structural stability and magnetic properties of Mn3+xAl1-xC antiperovskite with varied Mn/Al substitution were studied systematically. Single phase Mn3+xAl1-xC alloys with antiperovskite structure were obtained in samples with x = −1/4, 0, 1/4, 1/2. An additional Mn23C₆ phase was precipitated from Mn3+xAl1-xC antiperovskite for x = 3/4 while Mn23C₆ phase was formed as major phase for x = 1. The mutual substitution of Mn and Al atoms has substantial effect on the Curie temperature and the saturation magnetization of the Mn3+xAl1-xC alloys. In comparison with the as-cast alloys, the as-annealed Mn3+xAl1-xC alloys exhibit reduced Mn/Al substitutions after high temperature homogenization, which enhances the ordering of Mn and Al atoms in the lattices. The Curie temperature of the homogenized Mn3+xAl1-xC increases with increasing Mn substitution to Al. The Mn₃AlC alloy shows the highest saturation magnetization among all samples with varied Mn/Al ratios. Most samples show zero coercivity and zero remanent magnetization. The maximum value of the magnetic entropy changes of Mn2.75Al1.25C at 285 K is 2.26 J/㎏ K in fields up to 3 T.
Low-Density Quantum Dot Molecules by Selective Etching Using in Droplet as a Mask
Jihoon Lee,Wang, Z M,Hirono, Y,Dorogan, V G,Mazur, Y I,Eun-Soo Kim,Sang-Mo Koo,Seunghyun Park,Sangmin Song,Salamo, G J IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>We demonstrate low-density quantum dot molecules (QDMs) by selective etching using In droplets as a mask. Selective etching is performed with InGaAs QDMs buried underneath GaAs capping layer, on which In droplets are formed by droplet epitaxy using molecular beam epitaxy. During the chemical etching, the droplets act as a mask and QDMs underneath the droplets that only survive. Photoluminescence measurement from the selectively etched QDMs in mesa structures shows a much reduced intensity, which indicates low-density QDMs. This technique provides a simple and flexible method to attain low-density QDMs. The density can be easily modified by the control of the size and density of In droplets, which is suitable for single QDM spectroscopy and for their device applications.</P>
Jihoon Lee,Wang, Z M,Eun-Soo Kim,Nam-Young Kim,Seung-Hyun Park,Salamo, G J IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>The evolution of self-assembled InGaAs tandem nanostructures consisting a hole and pyramid is demonstrated using droplet epitaxy on various type-A high-index GaAs surfaces: (3 1 1)A (4 1 1)A, (5 1 1)A and (7 1 1)A. Under an identical fabrication condition depending on the index of surfaces, the resulting density and size of nanostructures are characteristic. The variation of density and size of nanostructures is explained with the relationship of the density of monolayer steps. An empirical model that describes the mechanism of self-assembled tandem nanostructures consisting a hole and pyramid is suggested as the concurrent occurrence of intermixing between droplets and substrate, dissolution of substrate and anisotropic surface diffusion.</P>
InGaAs quantum dot molecules during selective etching using an In droplet mask
Lee, Jihoon,Wang, Zhiming,Hirono, Yusuke,Kim, Eun-Soo,Koo, Sang-Mo,Dorogan, Vitaliy G,Mazur, Yuriy I,Song, Sangmin,Park, Gamyoung,Salamo, Gregory J Institute of Physics [etc.] 2011 Journal of Physics. D, Applied Physics Vol.44 No.2
<P>We investigated the optical transition of InGaAs quantum dot molecules (QDMs) during selective etching of GaAs using In droplets to demonstrate low-density QDMs. During the selective etching, In droplets act as nanoscale masks and only QDMs underneath the droplets survive, by which process low-density QDMs are fabricated. The thickness of selective GaAs etching is systematically varied and a gradual red-shift is observed with the increased etching thickness. The continuing red-shift can be explained by the strain relaxation due to GaAs etching. This technique to achieve low-density QDMs by selective etching using droplets as nanoscale mask is a simple and flexible approach. This study can find applications in single QDM spectroscopy and other spectroscopic techniques.</P>
Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells
Wu, Jiang,Wang, Zhiming M,Dorogan, Vitaliy G,Li, Shibin,Lee, Jihoon,Mazur, Yuriy I,Kim, Eun Soo,Salamo, Gregory J Springer 2013 Nanoscale research letters Vol.8 No.1
<P>Strain-free GaAs/Al<SUB>0.33</SUB>Ga<SUB>0.67</SUB>As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy.</P>