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Min Li,Xiao-Yan Xue,Yong Wang,Fu-Qiang An,Tuo-Ping Hu,Jian-Feng Gao 대한화학회 2018 Bulletin of the Korean Chemical Society Vol.39 No.1
In this article, a new surface imprinted polymer D301-g-IIPDMC is successfully prepared using AuCl4− as a template. The adsorption and recognition performances of D301-g-IIPDMC for AuCl4− are studied by using a static method and competitive adsorption experiment. The experimental results show that D301-g-IIPDMC possesses very strong adsorption affinity and excellent recognition for AuCl4−. The adsorption capacity of D301-g-IIPDMC for AuCl4− is 831.08 mg/g, and the selectivity coefficient relative to CuCl42− is 128. The adsorption behavior is an endothermic spontaneous process, and fit well with pseudo-second order kinetic model and Freundlich adsorption isotherm model. Besides, D301-g-IIPDMC is desorbed easily and exhibits excellent reusability.
Modelling of Acoustic Waves Propagating in Nesting Fibonacci Super-Lattice Phononic Crystal
Min Zhao,Hai-Feng Qi,Jia-Hui Xu,Ya-Zhuo Xie,Xing-Gan Zhang,Jian Gao 대한금속·재료학회 2014 METALS AND MATERIALS International Vol.20 No.4
Herein, we report construction of one kind of nesting-Fibonacci-super-lattice phononic crystal, in whichthe super-lattice cell is a well-defined Fibonacci generation sequence. We present a comparative study onband-gap structures of acoustic waves propagating in one-dimensional, nesting Fibonacci-periodic structureand simple-periodic structure. We find that there are more band gaps in nesting Fibonacci super-latticemodels, and that they present behavior different from the split-up of band gaps with different generationnumbers. With the increase of generation number, more band gaps split and occur. Additionally, whengeneration number becomes larger, Bragg scattering becomes more significant: the characteristic curvesbecome flatter and band gaps become wider. Furthermore, we study the effect of various parameters suchas density, thickness and defects on band-gap structures. Our work is significant both for understandingthe intrinsic physical properties of nesting Fibonacci sequences and for providing flexible choices to meetreal engineering requirements.
Shuai Gao,Min Wang,Jian‑long Guo,Hao Wang,Jian‑guo Zhi,Yan‑ping Bao 대한금속·재료학회 2021 METALS AND MATERIALS International Vol.27 No.5
The TiN–MnS complex inclusions in Al-killed titanium alloyed interstitial free steel were extracted from the slabs using anelectrolytic aqueous solution method. Scanning electron microscopy with energy spectroscopy analysis and an automaticscanning electron microscope were employed to analyze the size and distribution of TiN–MnS inclusions in the thicknessdirection of the slab. It was found that TiN–MnS complex inclusions were primarily concentrated in the 1/4 thickness directionfrom the inner and outer surfaces, and the size of the complex inclusions in the slab center was approximately 8 μm.TiN began to precipitate when the solidification rate reached 0.646–0.680 in the δ phase, and MnS would appear in the γphase when the solidification rate exceeded 0.450 through thermodynamic analysis. Also, the formation mechanism of thecomplex TiN–MnS was investigated under a crystal structure during solidification.
( Xia Gao ),( Xu Ping Fu ),( Tao Li ),( Jian Zi ),( Yao Luo ),( Qing Wei ),( Er Liang Zeng ),( Yi Xie ),( Yao Li ),( Yu Min Mao ) 생화학분자생물학회 2003 BMB Reports Vol.36 No.6
In microarray data mining, one of the key problems is how to handle weak signals. Based on a bent piecewise linear accumulated distribution generally found in the microarray data, a new detectable threshold finding method is proposed to filter genes with unreliable information in this paper. More reliable and reproducible data is produced for the subsequent data mining.
Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits
Wei Wang,Min Xu,Jichao Liu,Na Li,Ting Zhang,Sitao Jiang,Lu Zhang,Huan Wang,Jian Gao 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ФM1/ФM2/ФM3 have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.
Profiling Gene Expression During Gland Morphogenesis of a Glanded and a Glandless Upland Cotton
Ying-Fan Cai,Min Chen,Quan Sun,Yong-Fang Xie,Sheng-Wei Li,Jian-Chuan Mo,Ming-Feng Jiang,You-Lu Yuan,Yu-Zhen Shi,Huai-Zhong Jiang,Zheng Pan,Yun-Ling Gao,Peng-Sheng Ye,Hua-Lan Zeng 한국식물학회 2009 Journal of Plant Biology Vol.52 No.6
The pigment gland is an important character of the Gossypium plant. With the aim of identifying genes involved in pigment gland morphogenesis in cotton, gene expression during pigment gland morphogenesis in Chuan 2802, which is glanded both in seed and plant, and a glandless line N5 was profiled using Affymetrix Cotton microarray. The results showed that there were 564 differentially expressed genes greater than twofold during gland morphogenesis. About 60.2% of these genes shares similarity with known genes on GenBank and about 39.8% with no functional description in the database. These described genes may play roles in defense response, response to oxidative stress, peroxidase activity, and the other metabolic pathways. The KEGG Orthology-Based Annotation System indicated that these above twofold expressed genes involved seven biochemical pathways on KEGG. These findings suggest that a complicated regulation is associated with pigment gland morphogenesis and the associated defense response including gossypol biosynthesis in cotton.
Agglomeration of particles during coal combustion in multistage spouted fluidized tower
Jia-Xun Liu,Jian-Min Gao,Xiao-Feng Wang,Shao-Hua Wu,Ji-Hui Gao 한국화학공학회 2009 Korean Journal of Chemical Engineering Vol.26 No.3
An experimental platform of spray agglomeration has been designed and built for removing small fly ash particles (PM10) from coal combustion. Systematic experiments were conducted in a multistage spouted tower using kinds of agglomerant solutions. The particle concentration increases greatly from the first stage to the second stage of the tower. With the increase of flue gas flow rate the oscillation of impulse signal response curves increases and the internal circulation of the tower intensifies. The influencing factors such as the surfactant, PH value, flow rate of the agglomerant solutions and inlet flue gas temperature were analyzed. SEM was used to analyze the microstructure of the particles. Final results indicate that the special shape of a multistage spouted fluidized tower has significant influences on the effect of agglomeration. The findings from this work will be helpful to form the basis, and provide guidance for, further studies on the control of fine particles such as PM2.5 or even smaller.
Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits
Wang, Wei,Xu, Min,Liu, Jichao,Li, Na,Zhang, Ting,Jiang, Sitao,Zhang, Lu,Wang, Huan,Gao, Jian The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1
An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.