여드름 환자에서의 경구 레티노이드(Roaccutane^(�))의 치료 효과

김종율,김성진,이지범,이승철,원영호 全南大醫大 2000 전남의대학술지 Vol.36 No.2

반응성 DC sputtering법으로 제조한 AIN박막의 수소첨가효과

김지균,김민석,권정열,이헌용 明知大學校 産業技術硏究所 2000 産業技術硏究所論文集 Vol.19 No.-

In GaAs devices, the development of a finer insulator instead of SiO₂to be used the insulator of Si has been made good progress. That, however, is not to be enough. We studied the development of the finer insulator in GaAs devices. The AIN has the characteristics of thermal stability over 2400℃ and resistivity over 10 13 Ω, and superior insulator characteristic to have rate of thermal expansion(a=4.2x10 -6, b=5.3x10 -6/K) similar with SiO₂and GaAs. An AIN has been evaluated good applied insulator for above characteristics in chemical compound. Then, the purpose of this paper is a development of MIS devices using AIN as an insulator, and is to investigate a electrical characteristic changing by H₂addition to AIN. The ratio of H₂addition was established by 5%. The pressure was maintained by 5 mTorr and the DC power was supplied by 150W during the experiment. The H₂addition to AIN may have an effect on diminishing impurities on surface and improves the properties as an insulator to a MIS structures.

小兒 驚風의 鍼灸治療에 對한 文獻的 考察

朴志修,金允姬,柳同烈 대전대학교 한의학연구소 2001 혜화의학회지 Vol.10 No.1

Infantile Convulsion, one of common emergency symptoms in pediatrics, arises from sudden derangement of the central nerve system, and can cause a sudden loss of consciousness and spasm. It falls into three categories; Acute Infantile cnvulsion, Chronic Infantile convulsion and Chronic Spleen convulsion. According to research, approximately 6~7% of all babies undergo spasm more than once. Since the treatment must be done immediately, acupuncture & moxibustion treatment can be one of the most important treatments in this particular case. Therefore, the focus of this study is on how acupuncuture & moxibustion can be utilized in the treatment of Infantile Convulsion, and the literary findings are as follows: 1. The meridian points used on acute infantile convulsion are Sugu(GV26), T´aech´ung(Liv3), Hapkok(LI4). 2. The meridians used on acute infantile convulsion are Governor Vessel(GV), Bladder Meridian(BL), Stomach Meridian(ST). 3. The meridian points used on accompanied symptoms with acute infantile convulsion are Haenggan(Liv2), Yangnungch´on(Liv3) on spasm, Paek´oe(GV14) on opisthotonus, Kokchi(LI11), Taech´u(GV14) on fever, Nogung(P8), Yongch´on(K1) on fainting spell, Chok-samri(S36) on body weakness. 4. The meridian points used on chronic infanitle convulsion are Shinguol(CV8), Ch´onchj´u(S25), T´aech´ung(Liv3), Kwanwon(CV4), Ch´ukt´aek(L5). 5. The meridians used on chronic infantile convulsion are Conception Vessel(CV), Governor Vessel(GV), Stomach Meridian(ST). 6. The meridian points used on accompanied symptoms with chronic infantile convulsion are Ch´onchj´u(S25), Kolli(CV11) on diarrhea, Taenung(P7), Shinmun(H7) on fainting spell, Kansu(B18), T´aech´ung(Liv3) on spasm. 7. The meridian points and meridians are Paek´oe(GV14), Sangsung(GV23), Sugu(GV26) of Governor Vessel(GV) and Chonjung(CV16), Shinguol(CV16) of Conception Vessel(CV) and Taedon(Liv1), Changmun(Liv13).

열처리에 따른 ZnO 박막 센서의 특성

류지열,박성현,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1

The ZnO(zinc oxide) thin film sensors were manufactured by RF magnetron sputtering method and added up to 4 wt. % Al_(2)O_(3), 1 wt. % TiO_(2) and 0.2 wt. % V_(2)O_(5) on the basis of ZnO material for developing the high sensitive gas sensors which have practically moderate resistivity and the stability. They were also grown on heated SiO_(2)/Si substrates of 250 ℃ at a pressure of about 10 mTorr in the pure oxygon gas with a power of about 80 watts for 10 minutes. To manufacture the thin film of the more stable high sensitivity, the thin films were also annealed from 400 ℃ to 800 ℃ and the thin films which were annealed with 700℃ for 60 minutes in the pure oxygon gas exhibited a good properties. The thin film grown in this conditions exhibited the sensitivity of maximum 550 in TMA gas concentration 160 pμm and exhibited a good stability and excellent linearity.

TMA 가스 센서를 위한 발열체 제작 및 특성

박성현,류지열,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1

Pt/Ti heater for TMA gas sensor was fabricated by RF magnetron sputtering method. It was grown on heated Si substrates of 250 ℃ at a pressure of about 5 mTorr in the pure argon gas with RF power of about 140 watts. Pt and Ti target alternated at intervals of even 2 minutes for 30 minutes. The heater which was grown in the ratio of 1 to 1(Pt:Ti) exhibited initial(room temperature) resistance of 45 ohms and a power dissipation of 9.6 watts up to 300℃ heater temperature. The width of resistor variance(R_(T)/R_(O)) exhibited 1.65. We can conclude that heater which was grown in the ratio of 1 to 1(Pt:Ti) is useful as a heater for TMA gas sensor

이온토포레시스에 의한 경피 투과도 조절

이승연,여지선,김혜지,민혜란,오승열 숙명여자대학교 약학연구소 2004 약학논문집-숙명여자대학교 Vol.21 No.-

We have prepared hydrophilic karaya gum patches containing ketoprofen and studied some important factors which affect the transdermal flux of ketoprofen, as a first step to develop an iontophoretic transdermal patch system. The effect of penetration enhancer (propylene glycol monolaurate: PGML), short-time current treatment and continuous current on flux was studied. The effect of pH of the receptor solution and poly (L-lysine) (PLL) was also studied. PGML increased the passive flux markedly, and as the concentration of PGML in the matrix increased, passive flux increased. Iontophoretic treatment of skin (0.4 mA/cm²) for an hour increased the average passive flux more than two times, when the matrix contained no enhancer. It also increased the average passive flux further, when enhancer was incorporated into the matrix. Continuous iontophoretic transport showed unexpected result; the average flux at 0.2 mA/cm² was similar to that at 0.4 mA/cm², and was higher than that at 0.6 mA/cm². PLL increased the continuous iontophoretic transport at all current density, and the average flux was higher at 0.6 mA/cm² than at 0.4 and 0.2 mA/cm². Similar results were obtained when the receptor solution was changed to pH 4.0 buffer solution. These result demonstrate, that electro-osmotic flow is playing an important role in the flux of ketoprofen.

ZnO 박막 센서의 DMA 가스 검지 특성

김성우,최우창,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1

The DMA(Dimethylamine) gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and DMA gas concentration. The ZnO-based thin film sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3) and V_(2)O_(5) and sputtered in oxygen atmosphere showed the maximum sensitivity of 218(working temperature, 250 ℃, DMA gas, 160 ppm) and speedy response time. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3), TiO_(2) and V_(2)O_(5), sputtered in oxygen atmosphere and aged at 330 ℃ showed the maximum sensitivity of 156(working temperature, 250 ℃, DMA gas, 160 ppm).

TMA 가스센서용 마이크로히터 발열특성 연구

박성현,최우창,김성우,류지열,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1

The microheaters with Si_(3)N_(4)(1500Å)/SiO_(2)(3000Å)/Si_(3)N_(4)( 1500Å) diaphragm were fabricated by thin film technology and silicon micromachining techniques. Pt and poly-Si(n+) materials were used as heater materials of microheater. Pt temperature sensor was fabricated to detect the temperature of microheaters. The thermal analysis including temperature distribution on diaphragm and power consumption of the microheater were executed by the FEM method and heat transfer equations. The power consumption of the Pt and poly-Si(n+) heaters were measured and compared to that of thermal analysis by FEM simulation.

ZnO 박막 센서의 암모니아 가스 검지 특성

최우창,김성우,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1

The ammonia gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and ammonia gas concentration. The sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The Au(0.3 wt.%) doped-ZnO thin film sensors aged at 330 ℃ showed the maximum sensitivity of 28 and good response time at a working temperature of 250 ℃ and to 160 ppm ammonia gas. The Pt(0.1 wt.%) doped-ZnO thin film sensors showed the maximum sensitivity at a low working temperature of 200 ℃.

A New Programmable RF System for System-on-Chip Applications

Jee-Youl Ryu,Sung-Woo Kim,Jung-Hun Lee 보안공학연구지원센터 2011 International Journal of Multimedia and Ubiquitous Vol.6 No.2