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Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성
신영진 ( Y . J . Shin ),홍광준 ( K . J . Hong ),이상열 ( S . Y . Lee ),유상하 ( S . H . You ),서상석 ( S . S . Suh ),문종대 ( J . D . Moon ),신현길 ( H . K . Shin ),김택성 ( T . S . Kim ),송정훈 ( J . H . Song ),유기수 ( K . S . R 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N₂ gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 A and 7.014 A, respectively. Its grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
1×1 mm<sup>2</sup> 대면적 녹색 LED의 전기 광학적 특성 분석
장이운,조동섭,전주원,안태영,박민주,안병준,송정훈,곽준섭,김진수,이인환,안행근,Jang, L.W.,Jo, D.S.,Jeon, J.W.,Ahn, Tae-Young,Park, M.J.,Ahn, B.J.,Song, J.H.,Kwak, J.S.,Kim, Jin-Soo,Lee, I.H.,Ahn, H.K. 한국진공학회 2011 Applied Science and Convergence Technology Vol.20 No.4
본 논문은 InGaN/GaN 다중양자우물 구조를 가지는 녹색 발광다이오드의 활성층 내 인듐(In) 조성비와 piezoelectric field에 대한 전계 흡수 현상을 연구하였다. 활성층 내 결정학적 성질과 In 조성비는 double crystal X-ray diffraction 측정으로 분석하였으며, $1{\times}1\;mm^2$ 대면적 칩을 제작하여 발광특성을 조사하였다. 또한, 활성층 내 piezoelectric field는 electro-reflectance spectroscopy로부터 측정한 compensation voltage를 이용해 계산하였고, 인가전압에 따른 photocurrent의 변화를 측정함으로써 녹색 발광 소자의 전기 광학적 특성을 분석하였다. We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.
홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 ( K . J . Hong,S . Y . Lee,S . H . You,S . S . Suh,J . D . Moon,Y . J . Shin,T . S . Jeoung,H . K . Shin,T . S . Kim,J . H . Song,K . S . Rheu ) 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N₂ gas at 5500 it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7129 Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
1×1 ㎟ 대면적 녹색 LED의 전기 광학적 특성 분석
장이운(L. W. Jang),조동섭(D. S. Jo),전주원(J. W. Jeon),안태영(Tae-Young Ahn),박민주(M. J. Park),안병준(B. J. Ahn),송정훈(J. H. Song),곽준섭(J. S. Kwak),김진수(Jin-Soo Kim),이인환(I. -H. Lee),안행근(H. K. Ahn) 한국진공학회(ASCT) 2011 Applied Science and Convergence Technology Vol.20 No.4
본 논문은 InGaN/GaN 다중양자우물 구조를 가지는 녹색 발광다이오드의 활성층 내 인듐(In) 조성비와 piezoelectric field에 대한 전계 흡수 현상을 연구하였다. 활성층 내 결정학적 성질과 In 조성비는 double crystal X-ray diffraction 측정으로 분석하였으며, 1×1 ㎟ 대면적 칩을 제작하여 발광특성을 조사하였다. 또한, 활성층 내 piezoelectric field는 electro-reflectance spectroscopy로부터 측정한 compensation voltage를 이용해 계산하였고, 인가전압에 따른 photocurrent의 변화를 측정함으로써 녹색 발광 소자의 전기 광학적 특성을 분석하였다. We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the 1×1 ㎟ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.