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Kiran, A J,Lee, H W,Sampath Kumar, H C,Rudresha, B J,Bhat, B R,Yeom, D-I,Kim, K,Rotermund, F IOP Publishing 2010 Journal of optics Vol.12 No.3
<P>A new coordination compound, chloro(1,10-phenanthroline-<I>N</I>, <I>N</I><SUP>′</SUP>)(triphenylphosphine)copper(I) dichloromethane, incorporated in poly(methyl methacrylate) exhibits superior nonlinear optical properties in the near-infrared spectral region. Its nonlinear response time and third-order nonlinear optical susceptibility at 800 nm are ≤ 90 fs and 1.8 × 10<SUP> − 10</SUP> esu, respectively. Considerable nonlinear absorption is observed with this sample, near 800 and 1250 nm. The contribution of the excited states to the total nonlinear absorption process is discussed. The results reveal the potential of this newly designed compound for multi-photon absorption-based photonic applications.</P>
Kiran, A.J.,Lee, H.W.,Ravindra, H.J.,Dharmaprakash, S.M.,Kim, K.,Lim, H.,Rotermund, F. Elsevier 2010 Current Applied Physics Vol.10 No.5
A chalcone single crystal, 1-(4-chlorophenyl)-3-(4-methoxyphenyl)prop-2-en-1-one that is transparent over the visible to infrared region is introduced as a new potential material to third-order nonlinear optical applications. The crystal exhibits ultrafast optical response (@?90 fs) and large optical nonlinearity in the wavelength range 800-1200 nm. A very large effective two-photon absorption coefficient β<SUB>eff</SUB>exceeding 120 cm/GW can be obtained with this chalcone crystal, at a low intensity threshold of 41 MW/cm<SUP>2</SUP> The mechanism of nonlinear absorption at different levels of intensity has been discussed. The crystal shows no damage against the laser pulse intensity as high as 8 GW/cm<SUP>2</SUP> We discuss the molecular and crystal designing of chalcones with large and ultrafast optical nonlinearity combined with low optical cut-off (<450 nm).
A. John Kiran,H.W. Lee,K. Kim,H. Lim,F. Rotermund,H.J. Ravindra,S.M. Dharmaprakash 한국물리학회 2010 Current Applied Physics Vol.10 No.5
A chalcone single crystal, 1-(4-chlorophenyl)-3-(4-methoxyphenyl)prop-2-en-1-one that is transparent over the visible to infrared region is introduced as a new potential material to third-order nonlinear optical applications. The crystal exhibits ultrafast optical response (≤90 fs) and large optical nonlinearity in the wavelength range 800–1200 nm. A very large effective two-photon absorption coefficient βeff exceeding 120 cm/GW can be obtained with this chalcone crystal, at a low intensity threshold of 41 MW/㎠. The mechanism of nonlinear absorption at different levels of intensity has been discussed. The crystal shows no damage against the laser pulse intensity as high as 8 GW/㎠. We discuss the molecular and crystal designing of chalcones with large and ultrafast optical nonlinearity combined with low optical cut-off (<450 nm).
V. S. MUTHUKUMAR,J. K. KIRAN,JASON REPPERT,R. SATYAJIT,VAMSI KRISHNA,G. NAGESHWAR RAO,S. SIVA RAMA KRISHNAN,S. SIVA SANKARA SAI,K. VENKATARAMANIAH,A. M. RAO 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2008 NANO Vol.3 No.3
Saturable absorbers and optical limiters have contrary optical transmission properties. We report observations of simultaneous occurrence of both these effects in a nickel sulphide nanoparticle (average dia. ~5 nm) solution and a simultaneous quantitative measurement of both. Intensity dependent nonlinear transmission studies carried out using a 7 ns Nd:YAG laser at 532 nm by the Z-scan method, revealed efficient optical limiting in nickel sulphide nanoparticle suspensions. Induced nonlinear optical scattering was identified to be the mechanism of optical limiting, and absorption at 532 nm was found to saturate. A modification of the conventional Z-scan implementation led to the retrieval of the saturation intensity which is otherwise overshadowed by very strong nonlinear scattering.
Liu, Huajun,Dong, Yongqi,Cherukara, Mathew J.,Sasikumar, Kiran,Narayanan, Badri,Cai, Zhonghou,Lai, Barry,Stan, Liliana,Hong, Seungbum,Chan, Maria K. Y.,Sankaranarayanan, Subramanian K. R. S.,Zhou, Hua American Chemical Society 2018 ACS NANO Vol.12 No.5
<P>Memristive devices are an emerging technology that enables both rich interdisciplinary science and novel device functionalities, such as nonvolatile memories and nanoionics-based synaptic electronics. Recent work has shown that the reproducibility and variability of the devices depend sensitively on the defect structures created during electroforming as well as their continued evolution under dynamic electric fields. However, a fundamental principle guiding the material design of defect structures is still lacking due to the difficulty in understanding dynamic defect behavior under different resistance states. Here, we unravel the existence of threshold behavior by studying model, single-crystal devices: resistive switching requires that the pristine oxygen vacancy concentration reside near a critical value. Theoretical calculations show that the threshold oxygen vacancy concentration lies at the boundary for both electronic and atomic phase transitions. Through <I>operando</I>, multimodal X-ray imaging, we show that field tuning of the local oxygen vacancy concentration below or above the threshold value is responsible for switching between different electrical states. These results provide a general strategy for designing functional defect structures around threshold concentrations to create dynamic, field-controlled phases for memristive devices.</P> [FIG OMISSION]</BR>