http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Photoluminescence of Er-implanted GaN
손창식,Seong-Il Kim,Akihiro Wakahara,Homero Castaneda Lapez,Il-Ki Han,최인훈,Yong Tae Kim,Young-Hwan Kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
Visible green emission has been observed from Er(Erbium)-doped GaN epilayers. Various doses of Er ions were implanted in GaN epilayers by using ion implantation. The optical properties of Er-doped GaN were analyzed by using photoluminescence (PL). Sharp emission lines due to inner 4f shell transitions for Er3+ were observed in the PL spectrum of Er-implanted GaN. The emission spectrum consisted of two narrow green lines, 537 and 558 nm. The green emission lines were identied as Er3+ transitions from the 5H11=2 and the 4S3=2 levels to the 4I15=2 ground state. The stronger peaks in the 5 1014 cmက2 sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, indicate that some damage remains in the 1 1015 cmက2 sample.