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Red Emission from Eu-Implanted GaN
손창식,김성일,Akihiro Wakahara,Hisao Tanoue,최인훈,Mustuo Ogura,Yong Tae Kim,김영환 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Eu ions were implanted into GaN epilayers on sapphire substrates. Sharp visible red emission lines due to inner 4f shell transitions for Eu3+ can be observed from the photoluminescence of Eu-implanted GaN. The 5D0 !7F2 transition produces the strongest red emission line. Minor lines are observed in the given spectral range. The lines at 546, 603, 624, and 667 nm are assigned to 5D1 !7F1 and 5D0 !7F1;2;3 transitions, respectively. These emission lines are little changed with varying temperature. Eu-implanted GaN can be a suitable material for application in red emission devices.
Photoluminescence of Er-implanted GaN
손창식,Seong-Il Kim,Akihiro Wakahara,Homero Castaneda Lapez,Il-Ki Han,최인훈,Yong Tae Kim,Young-Hwan Kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
Visible green emission has been observed from Er(Erbium)-doped GaN epilayers. Various doses of Er ions were implanted in GaN epilayers by using ion implantation. The optical properties of Er-doped GaN were analyzed by using photoluminescence (PL). Sharp emission lines due to inner 4f shell transitions for Er3+ were observed in the PL spectrum of Er-implanted GaN. The emission spectrum consisted of two narrow green lines, 537 and 558 nm. The green emission lines were identied as Er3+ transitions from the 5H11=2 and the 4S3=2 levels to the 4I15=2 ground state. The stronger peaks in the 5 1014 cmက2 sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, indicate that some damage remains in the 1 1015 cmက2 sample.
Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN
Park, Ji-Ho,Wakahara, Akihiro,Okada, Hiroshi,Furukawa, Yuzo,Kim, Yong-Tae,Chang, Ho-Jung,Song, Jonghan,Shin, Sangwon,Lee, Jong-Han,Sato, Shin-ichiro,Ohshima, Takeshi IOP Publishing 2010 Japanese journal of applied physics Vol.49 No.r3
Ga 첨가량이 (Zn,Mg)O 투명전극 막의 전기적, 결정학적 특성에 미치는 영향
서광종,와카하라 아키히로,요시다 아키라,Suh, Kwang-Jong,Wakahara, Akihiro,Yoshida, Akira 한국재료학회 2005 한국재료학회지 Vol.15 No.8
(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.
Woo-Jin Lee,Su-Jin Hong,Sang-Hee Kim,Bok-Hee Kim,Akihiro Wakahara,Ji-Won Moon 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.1
TiOx-₂Nx electrodes were prepared by liquid sprayed mist chemical vapor deposition (LSMCVD) at 1 atmospheric pressure. The liquid source was made by dissolving the starting materials in 2-methoxyethanol. Through controlling the substrate temperature and deposition time, TiO₂-xNx films could successfully be fabricated. The photoelectrochemical response in an electrolyte for nitrogen-doped titanium dioxide, TiOx-₂Nx, was examined. From the optical absorption spectra of TiO₂-xNx and TiO₂ films, the TiO₂-xNx films noticeably absorb the light at less than 550 nm. With light irradiation, the photoelectrochemical response shows significant improvement for the nitrogen-doped film electrode, compared to the situation for undoped TiO₂. TiOx-₂Nx electrodes were prepared by liquid sprayed mist chemical vapor deposition (LSMCVD) at 1 atmospheric pressure. The liquid source was made by dissolving the starting materials in 2-methoxyethanol. Through controlling the substrate temperature and deposition time, TiO₂-xNx films could successfully be fabricated. The photoelectrochemical response in an electrolyte for nitrogen-doped titanium dioxide, TiOx-₂Nx, was examined. From the optical absorption spectra of TiO₂-xNx and TiO₂ films, the TiO₂-xNx films noticeably absorb the light at less than 550 nm. With light irradiation, the photoelectrochemical response shows significant improvement for the nitrogen-doped film electrode, compared to the situation for undoped TiO₂.