http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Jung Hyun Kang,Yong Kim,Hea Jeong Cheong,Hong Jun Bark,Jae Yel Yi,Kyu Man Cha,Tae Hun Chung,Young Dae KIm 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
The electroluminescence (EL) properties of metal-oxide-semiconductor (MOS) devices employing nanocrystal Si/SiO2 superlattices are investigated. The amorphous silicon-rich oxide/SiO2 superlattices are grown by using rapid thermal chemical vapor deposition. During high-temperature annealing at 1100 C, Si nanocrystals are precipitated. Despite the simple MOS structure, the device shows conventional diode behavior in the current-voltage characteristics. We observe EL only under the forward bias condition, and the turn-on voltage is as low as 8 V. The EL intensity increases with increasing bias and is saturated over 11 V. We observe a systematic blueshift of the EL with increasing applied bias. Therefore, the observed EL is attributed to radiative recombination of carriers confined in the Si nanocrystals.