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        Distributed Resource Allocation in Two-Hierarchy Networks

        Shuhui Liu,Yongyu Chang,Guangde Wang,Dacheng Yang 한국전자통신연구원 2012 ETRI Journal Vol.34 No.2

        In this paper, a new distributed resource allocation algorithm is proposed to alleviate the cross-tier interference for orthogonal frequency division multiplexing access macrocell and femtocell overlay. Specifically, the resource allocation problem is modeled as a non-cooperative game. Based on game theory, we propose an iterative algorithm between subchannel and power allocation called distributed resource allocation which requires no coordination among the two-hierarchy networks. Finally, a macrocell link quality protection process is proposed to guarantee the macrocell UE's quality of service to avoid severe cross-tier interference from femtocells. Simulation results show that the proposed algorithm can achieve remarkable performance gains as compared to the pure waterfilling algorithm.

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        Electrical conduction mechanism and photon-generated carrier recombination process in amorphous InSb films

        Yanping Yao,Chunling Liu,Haidong Qi,Xi Chang,Chunwu Wang,Guangde Wang 한국물리학회 2011 Current Applied Physics Vol.11 No.3

        Temperature dependence of dark conductivity and photoconductivity has been studied in amorphous InSb thin films in the temperature range of 120―300 K. The experimental data suggest that conduction in the high temperature range occurs in the extended states; conduction in the intermediate temperature range is due to thermally assisted tunneling of charge carriers in localized states near the band edge; while conduction in low temperature range takes place through variable range hopping of charge carriers in the localized states near the Fermi level. The temperature dependence of photoconductivity shows that the temperature region is divided into two regions.Moreover the result of intensity dependence of steady state photoconductivity indicates that bimolecular recombination at high temperatures and monomolecular at low temperatures in amorphous InSb thin films.

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