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Effect of a Post-annealing Etch Process on the Electrical Performances of 4H-SiC Schottky Diodes
강인호,김상철,주성재,Wook Bahng,김남균,Byung-Jae Park,Geon-Young Yeom 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
The effects of a post-annealing etch process on the electrical performances of 4H-SiC Schottky diodes without any edge termination were investigated. The post-annealing etch was carried out using two different dry etch techniques: an inductively coupled plasma (ICP) etch and a neutron beam etch (NBE), in order to eliminate suspicious surface damages occurring during a high-temperature ion-activation process. The reverse leakage current of the diode treated by using NBE was about one order lower than that of the diode without a post-etch process and was about half reverse leakage current of the diode treated by using ICP. In addition, the forward characteristics remained almost the same. These results were attributed to the elimination of damaged surface layers by the NBE process and partly to a lower number of plasma-radiation-related defects.