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Three-dimensional Modeling for the Transmittance of ITO/Mesh-Ag/ITO Multilayers using FDTD
Eou-Sik Cho,Sang Jik Kwon 대한전자공학회 2021 Journal of semiconductor technology and science Vol.21 No.5
In order to improve the transmittance of ITO/Ag/ITO multilayers, Ag layer was formed with mesh structure. For more accurate and practical analysis, we performed the simulations using an optical wave simulator termed the full-wave simulation program. In our simulations, the three dimensional (3D) finite-difference time-domain (FDTD) method was used to realize the high density mesh structure, and a plane wave with variable wavelengths ranging from 250 to 850 nm is incident in the z-direction at normal incidence to the ITO/Mesh- Ag/ITO film surrounded by free-air space. From the simulation results, at a higher open ratio and lower Ag thickness, the transmittance of ITO/Mesh-Ag/ITO were not influenced by other parameters. Experimental measurements were performed depending on the various Ag mesh-spaces and mesh-widths. The open ratio of about 60 % has shown the acceptable results in the points of both the optical transmittance and the electrical conductance.
Novel Process Technologies of a Deep-submicron MOSFET for the High Packing Density of Circuits
Eou-Sik Cho,Sang Jik Kwon 대한전자공학회 2021 Journal of semiconductor technology and science Vol.21 No.6
We have presented some novel process ideas to solve the major challenging problems in submicron device techniques. The key ideas are the ultra-shallow LDD (lightly doped source/drain) junction formation by using the SPD (solid phase diffusion) through ‘amorphous Si / thin oxide’ layer and the Ti silicidation by using selectively etched a-Si layer which is extended over the field oxide region. This TiSi₂ layer could be used as a local interconnect with the shrinkage of physical design width of the active mask. Using this FESD (Field Extended Source Drain) technology, the width of the physical active mask could be reduced 2.75 times smaller than that of the conventional structure. We have verified this technology successfully by the fabrication of PMOSFET with 0.76 μm gate length.
Cho, Eou Sik,Kwon, Sang Jik The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.1
Frequency filters with various filtering wavelengths were used in the photoelectric characterization of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and the experimental results were described and analyzed in terms of the photon energy spectral characteristics calculated from the integration of the photon energy and the spectral intensity of transmitted backlight through the filters at each wavelength. From the comparison of the photocurrents and the calculated photon energy spectrums for the filtered ranges of wavelength, it was possible to conclude that the photocurrents are closely related to the photon energy spectrums of the backlight.
Cho, Eou Sik,Kwon, Sang Jik The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.1
A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.
Effect of the Ag thickness on the Light Extraction Efficiency of the OLED with an ITO/Ag/ITO Anode
Yongmin Jeon,Eou-Sik Cho,Sang Jik Kwon 대한전자공학회 2022 Journal of semiconductor technology and science Vol.22 No.5
The light extraction efficiency of the organic light emitting diodes (OLEDs) with an ITO/Ag/ITO anode was analyzed by using the finite-difference time domain (FDTD) simulation method. For different inserted Ag thickness, the light extraction ratio was reduced as increasing the Ag thickness. The simulation results also showed the light extraction ratio began to be saturated at a critical angle as increasing the simulation monitor num as a result of the extraction loss due to the wave-guide mode by a total internal reflection. From the simulated electric field profiles, the light-outcoupling loss due to the surface plasmon polariton (SPP) mode was more apparently investigated as increasing the Ag thickness. In the fabrication of the OLED with ITO/Ag/ITO anode, the Ag thickness should be optimized with respect to the light extraction efficiency of the OLED as well as the electrical conductivity of the anode.
Ahn, Min-Hyung,Cho, Eou-Sik,Kwon, Sang-Jik The Korean Infomation Display Society 2008 Journal of information display Vol.9 No.4
A DC-magnetron inline sputter was established, and the influence of the base pressure on the structural characteristics of the ITO thin films was studied. When the inline sputter system was established and operated for ITO sputtering, its initial vacuum level did not go below $5\times10^{-6}$ torr. The vacuum leak test was conducted by measuring t he elapsed time until the vacuum level reached $1\times10^{-6}$ torr. The base pressure was successfully maintained at $1\times10^{-6}$ torr for 900 min, and the uniformity of the ITO film that had been deposited at this pressure significantly improved.
Analysis of a MgO Protective Layer Deposited with Ion-Beam-Assisted Deposition in an AC PDP
Sang Jik Kwon,Eou Sik Cho,Zhao Hui Li 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
MgO layer plays an important role for plasma display panels (PDPs). In this study, a MgO layer was deposited using the oxygen-ion-beam-assisted method while the assisting oxygen-ion-beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. We found that the assisting ion-beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. Crystallization of the MgO thin film was also measured using X-ray diffraction (XRD), and the surface quality was inspected using atomic forces microscopy (AFM) in order to analyze the characteristics of the MgO thin films.??