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Semiconductor Hetero Structures form Quantum to 3-D Stacking:the Art , Science and Technology
Lee, El Hang 대한전자공학회 1991 ICVC : International Conference on VLSI and CAD Vol.2 No.1
Recent progresses and trends in the state-of-the-art of the semiconductor heterostructure-related science and technology are reviewed. Covered issues include those of both quantum heterostructures and grossly mismatched ones. Fundamental issues as well as specific issues with respect to particular structures are examined. Because of limited space, the review is centered on selective issues and structures of technological interest. First the importance of semiconductor heterostructure is briefly described in light of technological and historical context. The physics and chemistry of heteroepitaxial processes, associated with various epitaxial techniques, are then reviewed in terms of related merits and demerits. Also covered are materials and device issues related to quantum heterostructures as well as to the grossly-mismatched heterostructures. Special attention is given to the feterostructures on silicon. Central issues relating to these structures include those stemming from both the matches and mismatches of lattice, thermal and chemical origin. Ways to utilize the heterostructures and prospects for future directions are discussed along with technological implications of the semiconductor heterostructures.
Lee, Seoung Hun,Kim, Seung Hwan,Kim, Kyong Hon,Lee, Min Hee,Lee, El-Hang The Optical Society 2009 Optics express Vol.17 No.12
<P>We report, for the first time to our knowledge, a novel and simple method for measuring continuous dispersion spectrum of unclamped linear electro-optic (EO) coefficient using a white-light interferometry. This method detects phase changes of the interference patterns with and without an applied electric voltage, and allows a simultaneous measurement of wavelength and polarization dependent EO coefficients of birefringent materials. Both of the unclamped EO coefficients, r(13) (T) and r(33) (T), of a congruent LiNbO(3) (LN) crystal have been measured simultaneously with the method, and their continuous dispersion curves have been also obtained.</P>
Lee, Seong-Jae,Park, Kyoung-Wan,Shin, Min-Cheol,Lee, El-Hang,Kim, Ju-Jin,Lee, Hu-Jong Electronics and Telecommunications Research Instit 1994 ETRI Journal Vol.16 No.2
We have identified two new features related to the coherent transport in the mesoscopic loop structure of aluminum wire, including the autocorrelation of the conductance fluctuations beyond $B_c$ and fine structure in the low-field magnetoresistance curve in the superconducting transition regime, which, to the best of our knowledge, have not been reported in the literature. Since the electrons in Al have a phase coherence length larger than $1\;{\mu}m$ at or below T = 3K, which is comparable to the dimensions of the structure, the wave nature of the electronic transport has been clearly observed: the universal conductance fluctuations, the Aharonov-Bohm oscillations, and the Altshuler-Aronov-Spivak oscillations. Due to the transition of Al to a superconducting state at T = 1.3 K, the coherent phenomena of Cooper pairs, i.e., the Little-Parks oscillations, have also been observed.
Atomic Structure of Sb/Si(111)- 5√3×5√3 Surface
LEE, El-Hang,YUN, Wan Soo,PARK, Kang-Ho,YI, Jae-Yel,HA, Jeong Sook,PARK, Seong-Ju 東亞大學校附設基礎科學硏究所 1998 基礎科學硏究論文集 Vol.15 No.1
We investigated 5√3×5√3 atomic structure of an Sb-passivated Si(111) surface using low energy electron diffraction(LEED) and scanning tunneling Microscope (STM). This interesting structure with large unit cell has been analyzed with high resolution STM images in detail. The proper structural model is suggested in order to describe the STM image and other experimental results. They are understood within the frame of Si(111)-5×5 DAS (dimer adatom stacking fault) structure having the site-selective replacement of Si atoms with Sb atoms.
Optimization of Thermo-Optic Parameters for Temperature-Insensitive LPWG Refractometers
Dongseok Lee,김경훈,Seok Hyun Hwang,Min-Hee Lee,El-Hang Lee 한국전자통신연구원 2006 ETRI Journal Vol.28 No.6
In this paper, we report numerically calculated results of testing a temperature-insensitive refractive sensor based on a planar-type long-period waveguide grating (LPWG). The LPWG consists of properly chosen polymer materials with an optimized thermo-optic coefficient for the core layer in a four-layer waveguide structure. The resonant wavelength shift below the spectral resolution of the conventional optical spectrum analyzer is obtained accurately over a temperature change of ±7.5°C even without any temperature control. The refractive index sensitivity of the proposed grating scheme is about 0.004 per resonant wavelength shift of 0.1 nm for an optimized thermo-optic coefficient.
적응형 보쉬공정(Adaptive Bosch Process)을 이용한 식각된 바닥면 연구
이승용(Seung-Yong Lee),양승국(Seung-Kook Yang),김한형(Han-Hyoung Kim),유한석(Han-Suk Yoo),신상현(Sang-Hyun Sin),장동훈(Dong-Hoon Chang),이일항(El-Hang Lee),오범환(Beam-Hoan O),이승걸(Seung-Gol Lee),박세근(Se-Geun Park) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
We do not use dedicated Bosch process equipment of high cost, it is uses Bosch process that fit existent ICP(Inductively Coupled Plasma) equipment. Bosch process which is method of deep silicon etching is connected repeatedly in using SF? Plasma for etching process and using C₄F? Plasma the deposition process. However, between etching bottom layer and side wall not verticality and curved layer is formed. It is used about this curved layer phenomenon. because of considering gas fraction, temperature, substrate voltage, process time etc. It is used about this curved layer phenomenon and suggested optimum process condition. Standard process for study of process gas used SF? and Ar, and source power 600W, substrate voltage used -200V. Deposition process used C₄F? gas, and source power 600W, substrate voltage did not used. Process substrate temperature makes via 0℃ and progressed study. Through these processing condition, we manufactured mold for NIL(Nano Imprint Lithography) process.