http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Duong Van Thiet,NGUYENVAN QUANG,Nguyen Thi Minh Hai,Nguyen Thi Huong,조성래,Duong Anh Tuan,Dang Duc Dung,트란반탐 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.8
In this work, we report on the structural and thermoelectric properties of Sb2Te3 films deposited on GaSb(111) substrates by using molecular beam epitaxy. The effects of the growth temperature on the microstructure and thermoelectric properties of the films were investigated. The results show that Sb2Te3 films grow on GaSb(111) along (00l) axis normal to the substrate and have a hexagonal structure with a layer-by-layer growth mode in growth temperature range from 200 to 250 °C while at 175 and 300 °C, the films show an island growth mode. Te and Sb2Te3 phases coexist at a growth temperature of 175 °C. The films exhibit a metallic behavior for growth temperatures below 250 °C and a semiconductor behavior at 300 °C. By changing growth temperature, we were able to vary the carrier density from 9.96×1018 to 4.55×1019 cm −3. At room temperature, the Seebeck coefficients are 110, 146, and 138 μV/K for growth temperatures of 175, 200 and 250 °C, respectively, and a large value of the power factor 61.67 μW/cm-K2 is achieved for the film grown at 250 °C.
Magnetism and Transport Properties of MnAs/GaAs Hybrid Structure
Duong Van Thiet,Dang Duc Dung,신유리미,조성래 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.10
Epitaxial [MnAs(20 ˚A)/GaAs(tGaAs)]4, tGaAs = 100, 200 and 300 ˚A, hybrid multilayer were grown on GaAs(001) substrate using molecular beam epitaxy. Compared to bulk MnAs, the enhancement of the Curie temperature about 340 K was observed. By decreasing the GaAs spacer layer from 300 to 100 ˚A, the magnetization was found to increase from 48 to 163 emu/cm3 possibly due to enhanced exchange interaction in narrower space layer, while the coercive field decreased from 690to 494 Oe. We have observed the variable range hopping conduction for all samples.
Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe
Nguyen, Van Quang,Nguyen, Thi Huong,Duong, Van Thiet,Lee, Ji Eun,Park, Su-Dong,Song, Jae Yong,Park, Hyun-Min,Duong, Anh Tuan,Cho, Sunglae Springer US 2018 NANOSCALE RESEARCH LETTERS Vol.13 No.1
<P><B>ᅟ</B></P><P>We report on the successful preparation of Bi-doped n-type polycrystalline SnSe by hot-press method. We observed anisotropic transport properties due to the (h00) preferred orientation of grains along the pressing direction. The electrical conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 12.85 and 6.46 S cm<SUP>−1</SUP> at 773 K for SnSe:Bi 8% sample, respectively, while thermal conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 0.81 and 0.60 W m<SUP>−1</SUP> K<SUP>−1</SUP> at 773 K for SnSe:Bi 8% sample, respectively. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition, whose transition temperature increases with Bi concentration. Our work addressed a possibility to dope polycrystalline SnSe by a hot-pressing process, which may be applied to module applications.</P><P><B>Highlights</B></P><P><P>We have successfully achieved Bi-doped n-type polycrystalline SnSe by the hot-press method.</P><P>We observed anisotropic transport properties due to the [h00] preferred orientation of grains along pressing direction.</P><P>We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition.</P></P><P><B>Electronic supplementary material</B></P><P>The online version of this article (10.1186/s11671-018-2500-y) contains supplementary material, which is available to authorized users.</P>