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Hwang, Younghun,Park, Seungmin,Kang, Manil,Um, Youngho Elsevier 2014 CURRENT APPLIED PHYSICS Vol.14 No.1
Crystalline ZnO:Ga thin films with highly preferential c-axis oriented crystals were prepared on Si(001) substrates at different temperatures using the reactive magnetron sputtering technique. Effects of temperature-induced stress in ZnO:Ga films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), electrical transport, and spectroscopic ellipsometry measurements. XRD results showed that the films were highly c-axis (out-of-plane) oriented and crystallinity improved with growth temperature. The residual compressive stress in films grown at low temperature relaxes with substrate temperature and becomes tensile stress with further increases in growth temperature. Resistivity of the films decreases with increasing stress, while the carrier concentration and mobility increase as the stress increases. The mechanism of the stress-dependent bandgap of ZnO:Ga films grown at different temperatures is suggested in the present work. (C) 2013 Elsevier B.V. All rights reserved.
Hwang, Younghun,Um, Youngho,Park, Hyoyeol Springer 2012 Nanoscale research letters Vol.7 No.1
<P>In this paper, we report a systematic investigation of band-edge photoluminescence for Cd<SUB>1-<I>x</I></SUB>Mn<I><SUB>x</SUB></I>Te crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated by the semiempirical Varshni relation. From the temperature dependence of the full width at half maximum of the L1 emission line, the broadening factors <I>Γ</I>(<I>T</I>) were determined from the fit to the data. The activation energies of thermal quenching were obtained for the L1 peak from the temperature dependence of the bound exciton peaks and were found to decrease with increasing Mn concentration.</P>