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        Ordered porous TiO2 films obtained by freezing and the application in dye sensitized solar cells

        Xingxing Wang,Bingchu Yang,Kechao Zhou,Dou Zhang,Zhiyou Li,Conghua Zhou 한국물리학회 2015 Current Applied Physics Vol.15 No.5

        TiO2 films with ordered porous structure were prepared by freezing. By simply freezing wet TiO2 film on a cold copper plate, ice crystals could grow from bottom of film. Removing such ice crystals then led to ordered, micro-sized pores in the films. With assistance of scanning electron microscopy and N2 adsorptionedesorption isotherms, micro-structural properties of the films were studied. Coarsening behavior of ice crystals was analyzed based on evolvement of the micro-structure. It was found that, both larger film thickness and longer freezing time were beneficial for the formation of ordered porous structure, which was caused by enhanced ice crystals growth. The films were then used to fabricate photoanode of dye sensitized solar cells, of which the photo-to-electric power conversion efficiency was evaluated. It was observed that, solar cell made of ordered porous TiO2 film came out with 13% larger photo-current density comparing to that made of conventional doctor blading method, which is due to the enhanced light scattering by the ordered porous structure.

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        Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

        Shao Ziyi,Xiao Junting,Guo Xiao,You Siwen,Zhang Yangyang,Li Mingjun,Song Fei,Zhou Conghua,Xie Haipeng,Gao Yongli,Sun Jiatao,Huang Han 한국물리학회 2022 Current Applied Physics Vol.36 No.-

        Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

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