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XSNP: 고성능 SoC 버스를 위한 확장된 SoC 네트워크 프로토콜
이찬호(Chanho Lee),이상헌(Sanghun Lee),김응섭(Eung-Sup Kim),이혁재(Hyuk-Jae Lee) 한국정보과학회 2006 정보과학회논문지 : 시스템 및 이론 Vol.33 No.8
최근, SoC 설계연구가 활발히 진행되고 있으며, 하나의 시스템에 보다 많은 수의 IP가 포함되고 있다. 많은 IP간의 효율적인 통신과 재사용율을 높이기 위해 다양한 프로토콜과 버스 구조들이 연구되고 있다. 기존의 공유 버스 구조의 문제점을 해결하기 위해 제안된 SNP(SoC Network Protocol)와 SNA(SoC Network Architecture)는 각각 peer-to-peer 방식의 프로토콜과 버스 구조이다. 한편 AMBA AHB는 대규모 SoC 시스템에 다소 부적절한 구조를 가짐에도 불구하고 산업 표준으로 자리매김 해왔다. 따라서 기존의 많은 IP들이 AMBA 인터페이스를 가지고 있으나 SNP와는 프로토콜과 완벽하게 호환되지 않는 문제점을 가지고 있다. 기존의 IP들의 인터페이스를 SNP로 바꾸기 전까지는 새로 제안된 버스 구조에서도 AMBA AHB와의 호환성을 완전히 배제할 수가 없다. 본 논문에서는 기존의 SNP가 확장된 XSNP(extended SNP) 스펙과 SNA 기반 시스템에서 이를 지원하는 SNA 컴포넌트를 제안한다. AMBA AHB와 SNP 사이의 프로토콜 변환을 지원하기 위해서 기존 SNP의 페이즈를 1 비트 확장하여 새로운 8개의 페이즈를 추가하였다. 따라서 AMBA 호환 가능한 IP는 SNP를 통해 성능 감쇠 없이 AHB-to-XSNP 변환기를 통해 통신할 수 있다. 또한 이러한 확장 방법은 AMBA AHB 뿐 아니라 SNP와 다른 버스 프로토콜 사이의 신호 변환에도 이용하여 SNP의 유연성과 성능을 향상시킬 수 있다. 제안된 구조의 검증/평가를 위해 다양한 시뮬레이션을 수행하였으며, AMBA AHB와의 호환성에 있어 문제가 없다는 것을 검증하였다. In recent years, as SoC design research is actively conducted, a large number of IPs are included in a system. Various bus protocols and bus architectures are designed to increase IP reusability. Among them, the AMBA AHB became a de facto standard although it is somewhat inadequate for a large scale SoC. We proposed SNP and SNA, high performance on-chip-bus protocol and architecture, respectively, to solve the problem of the conventional shared buses. However, it seems to be imperative that the new on-chip-bus system support AMBA-compatible IPs for a while since there are a lot of IPs with AMBA interface. In this paper, we propose an extended SNP specification and a corresponding SNA component to support ABMA-compatible IPs used in SNA-based system. We extend the phase of the SNP by 1 bit to add new 8 phases to support communication based on AMBA protocol without penalty of elongated cycle latency. The AHB-to-XSNP converter translates the protocol between AHB and SNP to attach AMBA-compatible IPs to SNA based system. We show that AMBA IPs can communicate through SNP without any degradation of performance using the extended SNP and AHB-to-XSNP converter.
Lee, Kihwan,Marbun, Tabita Dameria,Kim, Suyeon,Song, Jaeyong,Kwon, Chan Ho,Yoon, Duhak,Kang, Jungsun,Lee, Chanho,Cho, Sangbuem,Kim, Eun Joong The Korean Society of Grassland and Forage Science 2020 한국초지조사료학회지 Vol.40 No.3
This study was conducted to evaluate the effect of lactic acid bacteria (LAB) inoculation to domestically-cultivated Italian ryegrass (IRG) on silage fermentation and in vitro ruminal fermentation. There were six treatments based on the LAB inoculants: 1) no addition of LAB (negative control: NC), additions of 2) commercially-available LAB (positive control: PC), 3) Lactobacillus plantarum (LPL), 4) L. paracasei (LPA), 5) L. acidophilus (LA), and 6) L. pentosus (LPT). All treatments were inoculated at a concentration of 10<sup>6</sup> CFU/g and ensiled for 3, 7, 21, and 42 days in triplicate and analyzed for nutritive values when ensiling was terminated. Day 42 silage from all treatments were also examined for in vitro ruminal fermentation. After 42 days, LAB-inoculated silages had higher (P<0.05) lactic acid concentration compared to the NC. In terms of nutritive values, the silages treated with LPA, LA, and LPT showed higher (P<0.05) crude protein and lower (P<0.05) neutral detergent fiber and acid detergent fiber content compared to the rest of the treatment. In vitro ruminal dry matter degradability was not affected by LAB addition. However, LAB-treated IRG had shown higher (P<0.05) ammonia-N compared with that of the NC. LPA had shown the highest (P<0.05) volatile fatty acid concentration among the LAB examined. In conclusion, the addition of a single strain of LAB appeared to produce a quality IRG silage compared with the NC and the PC. Among the strains examined, LPA seemed to be superior to the others.
A New Culling Scheme for Low Power 3D Graphic Processors
Chanho Lee,Kyeongeun Choi 대한전자공학회 2008 ITC-CSCC :International Technical Conference on Ci Vol.2008 No.7
Recently, portable devices employ applications using 3D graphics such as 3D games and 3D navigations. The portable devices require small area and low power consumption. We propose an efficient culling scheme for low power 3D graphics processors. The proposed culling scheme consists of the selection and back-face culling in the geometry engine and the elimination of pixels outside in the rasterizer engine. The new scheme reduced both the hardware complexity and the number of operation cycles of culling operations. We design a 3D graphic pipeline using Verilog-HDL according to the proposed scheme, and verify it on an FPGA prototyping board. The latency of the proposed architecture is reduced by 15 cycles and the gate count of the synthesized result is reduced by 8%.
ASYMPTOTICS OF A CLASS OF ITERATED RANDOM MAPS
Lee, ChanHo Korean Mathematical Society 1993 대한수학회보 Vol.30 No.2
In this article S is a topologically complete subspace of $R^{1}$i.e., the relativized topology on S may be metrized so as to make S complete. B(S) is the Borel .sigma.-field of S. For .GAMMA. one takes a set of measurable monotone (increasing or dereasing) functions on S into itself. Make the assumption of pp. There exists $x_{0}$ and a positive integer $n_{0}$ such that (Fig.) It is then shown that there exists a unique inveriant probability to which $p^{(n)}$ (x,dy) converges exponentially fast in a metric (stronger than the Kolmogorov distance); this convergence is uniform for all x .mem. S. This generalizes an earlier result of Bhattacharya and Lee (1988) who considered monotone nondecreasing maps on S.
Lee,Chanho 崇實大學校 生産技術硏究所 1995 論文集 Vol.25 No.1
Sb δ-doped Si and Ge layers were grown by si MBE(Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350℃ and 600℃. The doping profile was as narrow as 41Åand the doping concentration of up to 3.5×10? cm? was obtained. The film quality was as good as bulk material as verified by RHEED(Reflected High Energy Electron Diffraction), SRP(Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb δ-doped Si layer, the δ-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.