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Reconfigurable Computing Approach for Tate Pairing Cryptosystems over Binary Fields
Chang Shu,Soonhak Kwon,Gaj, K. IEEE 2009 IEEE Transactions on Computers Vol.58 No.9
<P>Tate-pairing-based cryptosystems, because of their ability to be used in multiparty identity-based key management schemes, have recently emerged as an alternative to traditional public key cryptosystems. Due to the inherent parallelism of the existing pairing algorithms, high performance can be achieved via hardware realizations. Three schemes for Tate pairing computations have been proposed in the literature: cubic elliptic, binary elliptic, and binary hyperelliptic. In this paper, we propose a new FPGA-based architecture of the Tate-pairing-based computation over binary fields. Even though our field sizes are larger than in the architectures based on cubic elliptic curves or binary hyperelliptic curves with the same security strength, nevertheless fewer multiplications in the underlying field need to be performed. As a result, the computational latency for a pairing computation has been reduced, and our implementation runs 2-20 times faster than the equivalent implementations of other pairing-based schemes at the same level of security strength. Furthermore, we ported our pairing designs for eight field sizes ranging from 239 to 557 bits to the reconfigurable computer, SGI Altix 4700 supported by Silicon Graphics, Inc., and performance and cost are demonstrated.</P>
Inpainting: Survey and Experiments
Chang Shu,Yaojie Liu 보안공학연구지원센터 2016 International Journal of Signal Processing, Image Vol.9 No.10
Image inpainting is an important research topic in the field of image processing. The goal of inpainting is to recover the lost information of the target region from the rest of the image. Inpainting techniques can be applied in areas such as old photo restoration, object removal and demosaicing. Based on previous literatures of image inpainting and image modeling, we categorize inpainting processes of different methods and algorithms into the structure layer and the texture layer. Then the mathematical inpainting models and the formations of image impairment are analyzed and evaluated in detail. Experimental results are provided in the fifth section regarding to eight different algorithms measured by Peak Signal to Noise Ratio (PSNR) as well as direct visual perception.
Chang Shu,Rui Yang,Likun Yin,Xizhen Ai,Shaohui Wang,Wenchao Zhao 한국원예학회 2016 Horticulture, Environment, and Biotechnology Vol.57 No.4
To promote the stress resilience of sweet pepper crops (Capsicum annuum L.) and phase out the use of pesticides and other environmentally harmful materials, grafting has been used to integrate biotic or abiotic stress-resistance characteristics with sustainable crop production. This study aimed to determine the changes in the morphological characteristics, physiological features and low-temperature resistance of the sweet pepper cultivar ‘Hongxing No. 2’ grafted onto five rootstocks (‘No. 14’, ‘No. 15’, ‘No. 16’, ‘Jiaozhen108’, and ‘J4-908’) and itself. The morphological features of the aerial organs and roots of the different graft combinations were monitored, as were the activities of active oxygen-scavenging enzymes. Most morphological and physiological characteristics were significantly improved in the graft combination No. 2/Jiaozhen108, which indicated that Jiaozhen108 had a higher graft affinity with Hongxing No. 2 than the other rootstocks. No. 2/Jiaozhen108 also had a higher resistance to low temperatures. Therefore, the Jiaozhen108 rootstock is considered a quality candidate for grafting with the sweet pepper cultivar Hongxing No. 2, providing a theoretical basis for the screening and greenhouse production of low-temperature resistant stocks.
GaAs Thin Films Grown on Conducting Glass by Hot Wall Epitaxy for Solar Cell
Jielei Tu,Tingjin Chen,Chenjing Zhang,Zhaoshun Shi,Changshu Wu 한국진공학회(ASCT) 2002 Journal of Korean Vacuum Science & Technology Vol.6 No.2
GaAs polycrystalline thin films with good performance were prepared on conducting glass by hot wall epitaxy (HWE), which were used for solar cell. Electron probe micro-analyzer (EPMA) was applied for the composition, morphology of surface and cross-section of grown films, and X-ray diffraction (XRD) for their phase structure; Raman scattering spectrum (RSS) and photoluminescence (PL) were used for evaluating their optical characteristics. The results show that, there is textured structure on the surface of grown GaAs polycrystalline films, which is greatly promised to be suitable for the candidate of solar cell with low cost and high efficiency. It is concluded that the source and substrate at temperature of 900~930℃ and 500℃ respectively would be beneficial for such films.