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Fabrication of Porous Silicon Nanotips by Using Argon Ion-beam Irradiation
Chang Yong Zhan,Yu Zou,Jian-Chun Wu,P. K. Chu 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.2
Porous silicon nanotips (NTs) are promising in many applications such as field emission, superhydrophobicity,solar cells and photoluminescence. Ion irradiation can create unique nanostructures in many types of materials at room temperature, and this paper reports the surface morphology of porous silicon irradiated by an Ar+ ion beam. Different porous silicons are irradiated, and the effects of the ion’s angle of incidence on the porous silicon nanostructure are investigated. Highdensity NTs of less than 50 nm in size are observed on the porous silicon. The NT size increases,but NT density decreases, with increasing pore size. The orientation of the NTs can be controlled by adjusting the ion impact. Our results reveal that the NTs located at the thick wall between pores and charges created on the tip during Ar+ ion irradiation are beneficial to the formation of the NTs.
Design and transmittance measurement of the Ge1-xCx antireflection coatings
Chang Yong Zhan,Li Wu Wang,Hai Yang Dai,N. K. Huang 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.-
Ge1-xCx is used as high antireflection and protection coating on ZnS and ZnSe. Ge1-xCx coatings with a type of design of gradient index layers can be used in very broad bands. A technique combining medium frequency (MF) with direct-current (DC) magnetron reactive sputtering was used to deposit Ge1-xCx films based on our theoretical designs. The results according to experimental measurements show that the highest transmittance of Ge1-xCx coated on ZnSe slab can reach 94% at 8.5 μm, to transmittance value above 80\% can be obtained within the whole region of 5.8-12 μm and an average transmittance of 82.4% can be obtained within the range of 2.3 -- 14 μm. The average transmittances of ZnSe slab deposited with Ge1-xCx are 20 -- 30% higher than that of ZnSe in the corresponding band area. Ge1-xCx is used as high antireflection and protection coating on ZnS and ZnSe. Ge1-xCx coatings with a type of design of gradient index layers can be used in very broad bands. A technique combining medium frequency (MF) with direct-current (DC) magnetron reactive sputtering was used to deposit Ge1-xCx films based on our theoretical designs. The results according to experimental measurements show that the highest transmittance of Ge1-xCx coated on ZnSe slab can reach 94% at 8.5 μm, to transmittance value above 80\% can be obtained within the whole region of 5.8-12 μm and an average transmittance of 82.4% can be obtained within the range of 2.3 -- 14 μm. The average transmittances of ZnSe slab deposited with Ge1-xCx are 20 -- 30% higher than that of ZnSe in the corresponding band area.
Chung, Yong-Seog,Shin, Young-Kook,Zhan, Chang-Guo,Lee, Sung-Duck,Cho, Hoon The Pharmaceutical Society of Korea 2004 Archives of Pharmacal Research Vol.27 No.9
2- or 6-Substituted BZT-N derivatives were synthesized, and their cytotoxic activity against can-cer L1210 and SNU-1 cells was examined. The antitumor action was also assessed in mice bearing S-180 cells in peritoneal cavity. In a comparison, it was found that 6-substituted BZT-N derivatives exhibited higher potencies in both bioactivities than 2-substituted BZT-N derivatives against L1210 cells in in vitro and S-180 in vitro tests exception of compound 36. Interestingly, it was observed that 2-substituted compound 36, which has methyl group at RI position, exhib-ited a better antitumor activity than 6-substituted compounds against L1210 and SNU-1 in vitro. The EDso value of 2-substituted compound 36 against L1210 was found to be comparable to the EDso value of adriamycin and was even better against the solid cancer cell line SNU-1. It was also observed that 2-substituted compound 36 showed better antitumor activity in mice bearing S-180 cells in the peritoneal cavity. The T/C (%) value of 2-substituted compound 36 was simi-lar to that of adriamycin. Quantitative structure-activity relationship (QSAR) tests reveal that the experimental E $D_{50}$ values against SNU-1 closely correlate with both the calculated HOMO ener-gies ( $E_{HOMO}$) and the measured H-NMR chemical shift of 3-H ($\delta$$_{H}$). The results suggests that a compound having higher $E_{HOMO}$ and $\delta$$_{H}$ values usually should have a lower E $D_{50}$ (SNU-1) value.lue.lue.lue.
Geometrical and Magnetic Properties of Vanadium Clusters Supported on Graphene
Yu Zou,Chang Yong Zhan,Jian-Chun Wu,Li-Ping Zhou,Hai-Xia Da 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.2
We report ab-initio calculations of vanadium-cluster Vn(n = 2−5) adsorption on graphene sheets. Geometrical and magnetic properties of various adsorption configurations are studied using firstprinciples density-functional theory with the generalized gradient approximation. The geometrical and magnetic properties of vanadium clusters are found to be size-dependent, and the supported graphene sheet could influence the formation of the vanadium clusters. Low-dimensional Vn cluster configurations could be easily formed when they are absorbed on a graphene sheet, and the combined Vn-graphene systems exhibit a nonmagnetic state, which is the most stable magnetic configuration. Our calculations for the geometrical and the magnetic moment properties of Vn-graphene systems may be of interest for some nanotechnological applications.
Huan Wang,Yu Zou,Zhong Zhang,Kai-Yuan Wang,Huan An,Chang-Yong Zhan,Jun Wang,Jian-Chun Wu 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.8
The migration properties of uranium vacancies and interstitials in zirconium-doped uranium dioxide are studied by using density functional theory (DFT) and the climbing-image nudge elastic band (CI-NEB) method. The strong correlations among uranium $5f$ electrons were described by using a spherically averaged Hubbard parameter. In the model, the zirconium atoms are introduced by replacing the uranium atoms at the nearest and the next nearest neighbor sites along the diffusion path of uranium defects. The doping with zirconium obviously reduces the migration barriers for defects in uranium dioxide. The effect of doping with zirconium on the diffusion of uranium defects decreases with increasing distance between the zirconium dopant and the uranium defects. Further, we investigated the lattice distortion and the electron transfer associated with the migration of uranium defects, and we analyzed the physical origin of the reduction in the migration barriers caused by zirconium doping.