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RISS 인기검색어
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- 저자 : Abdelhamid El Kaaouachi (검색결과 2 건)
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Effective Mass and Land´e g-factor in Si-MOSFETs near the Critical Density
Lhoussine Limouny,Abdelhamid El kaaouachi,Chi-Te Liang 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.3
We analyze the electrical resistivity and conductivity of a dilute two-dimensional electron gas(2DEG) in a Si metal-oxide-semiconductor field-effect transistor. When a magnetic field is appliedparallel to the plane of the 2DEG, a signature of complete spin polarization, as evidenced by thesaturation of the resistivity, is observed. We measured the effective mass and the Land´e g-factornear the metal-insulator transition (MIT) and found that the Land´e g-factor remained almostconstant and close to its value in bulk silicon. In contrast, we have observed a sharp increase inthe effective mass near the critical density of the MIT. Our new results suggest that the sharpincrease in the previously-observed spin susceptibility is mainly due to the enhanced effective mass. Therefore, renormalization of the effective mass could play an important role in a dilute spinpolarized2DEG. The data indicate that electron-electron interactions strongly modify the effectivemass but only weakly affect the g-factor in a dilute 2DEG. Moreover, our results indicate that Bc,which corresponds to the magnetic field at which the magnetoresistivity reaches saturation, vanishesat a characteristic density n higher than the critical density nc of the MIT. This is in contrastto the existing experimental results, and further studies are required if this discrepancy is to beunderstood.
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Variable Range Hopping in a Dilute GaAs/AlGaAs Hole System
Asmaa Chakhmane,Hassan El Idrissi,Abdelhamid El Kaaouachi,Mohamed Errai,Abdellatif El Oujdi,Adil Echchelh 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.5
In this work, we conducted an investigation concerning low-temperature electrical transport phenomena in a two-dimensional (2D) GaAs hole gas. The different carrier densities of the sample locate them on the insulating side of the metal-insulator transition (MIT). Two theoretical models of variable range hopping (VRH) conduction according to Mott (Mott VRH region) and according to Efros-Shklovskii (ES VRH region) are used in the modeling of the experimental measurements obtained by Qiuet \textit{et al.} [Phys. Rev. Lett. \textbf{108}, 106404 (2012)].
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