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Variable Range Hopping in a Dilute GaAs/AlGaAs Hole System
Asmaa Chakhmane,Hassan El Idrissi,Abdelhamid El Kaaouachi,Mohamed Errai,Abdellatif El Oujdi,Adil Echchelh 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.5
In this work, we conducted an investigation concerning low-temperature electrical transport phenomena in a two-dimensional (2D) GaAs hole gas. The different carrier densities of the sample locate them on the insulating side of the metal-insulator transition (MIT). Two theoretical models of variable range hopping (VRH) conduction according to Mott (Mott VRH region) and according to Efros-Shklovskii (ES VRH region) are used in the modeling of the experimental measurements obtained by Qiuet \textit{et al.} [Phys. Rev. Lett. \textbf{108}, 106404 (2012)].