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이온 샤우어 도핑을 이용한 자기정렬방식의 APCVD 비정질 실리콘 박막 트랜지스터의 제작
문병연,이경하,정유찬,유재호,이승민,장진,Moon, Byeong-Yeon,Lee, Kyung-Ha,Jung, You-Chan,Yoo, Jae-Ho,Lee, Seung-Min,Jang, Jin 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.1
We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.
노연수(Yeon Soo Noh),김상엽(Sang Yeob Kim),문병연(Byeong Yeon Moon),조현국(Hyun Gug Cho) 한국안광학회 2014 한국안광학회지 Vol.19 No.3
To investigate the effect of corneal unique shape to changes of refractive full corrections when pupil size changes. Methods: Subjective refraction for monocular full correction was performed to 30 subjects (23.33±1.78 of age, 60 eyes) in two room conditions, 760 lx and 2 lx, respectively. Pupillary diameter was measured in two conditions and the change pattern was analyzed using a peak data of corneal topography. Results: Pupillary diameter was 3.74~4.00 mm in 760 lx and 5.52~5.90 mm in 2 lx. By comparison with refractive data in 760 lx, those data in 2 lx was changed as follows: more (-) spherical power of 17 eyes (28.3%), more (+) spherical power of 10 eyes (17.7%), more (-) cylinderical power of 17 eyes (28.8%), less (-) cylinderical power of 9 eyes (15.3%), and astigmatic axis rotation of 36 eyes (62.1%). From peak data of corneal topography, the changing pattern of two principal meridians was classified into 4 types. Conclusions: Expansion of the corneal refractive surface accompanied with pupillary dilation may be a main factor that effects the changing a values of subjective refraction because of unique corneal shape. Therefore, subjective refraction should be performed under the nearest lighting condition to a main living environment.
유순성,전정목,이경하,문병연,장진,Yoo, Soon-Sung,Jun, Jung-Mok,Lee, Kyung-Ha,Moon, Byeong-Yeon,Jang, Jin 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.5
We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.