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금기수,송태호,홍완식 한국정보디스플레이학회 2014 Journal of information display Vol.15 No.1
The influence of the filament configuration in a low-temperature catalytic chemical vapor deposition system on the substrate temperature and thickness uniformity was investigated for application to the silicon-based thin-film transistor backplane on flexible substrates. Serial and parallel arrangements of the filament were attempted. In the serial connection, the self-heating of the substrate was suppressed as the total length of the filament decreased for a given filament temperature. The areal distribution of the film thickness was affected more by the shape of the reactor than by the filament arrangement whereas the variation of the breakdown field strength and resistivity showed little correlation with the filament of the chamber geometry. On the contrary, in the parallel connection, the thickness distribution was influenced more by the location of the filaments than by the reactor shape. The 56 mm interfilament spacing resulted in the highest deposition rate, and the film thickness decreased radially from the center. When the interfilament spacing was 88 mm, both the average and the standard deviations of the thickness decreased, and the distribution changed,assuming an elliptical symmetry.
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共同住宅 居住者 特性과 住居環境滿足度의 相關關係에 관한 硏究
金基洙,朴碩鉉,梁富弘,崔生吉,朴義權,孫泰鎭,成基文 충주대 2004 産業科學論文集 Vol.12 No.-
The purpose of this research was to analyze the correlation of the characteristics of dwellers and residential satisfaction in apartment housing. The contents of this research is to identify characteristics of dwellers, which might have an influence on residential satisfaction in apartment housing. In conclusion, the number of a family, the floor level, the size of housing unit and tenure had statistically significant correlations with the residential satisfaction in apartment housing.
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마우스 肝 Alkaline Phosphatase의 分離 및 特性
琴技洙,姜信誠 慶北大學校 自然科學大學 1986 自然科學論文集 Vol.4 No.-
Alkaline phosphatase was purified from mouse liver tissues through the procedures of homogenation, butanol solublization, acetone extraction, Sephadex G-200 and concanavalin A-Sepharose chromatography, and its molecular and kinetic properties were characterized with the following results. The specific activity of liver alkaline phosphatase after affinity chromatography was found to be 11.7 unit/mg of protein with purification factor of 195-fold. The molecular weight of this enzyme was estimated to be about 120,000 composed of two identical subunits. The liver alkaline phosphatase had an optimum pH of 9.6∼10.0, and showed similar thermostability to that of the the other mammalian alkaline phosphatase. The Mg^2+ and Mn^2+ activated the enzyme activity and Ca^2+ showed little effect, whereas Co^2+, Zn^2+ and Cu^2+ decreased the activity. The liver enzyme was competitively inhibited by phosphate ion, but was uncompetitively inhibited by L-phenylalanine and L-homoarginine. Moreover, the inhibitory effect by homoarginine on the liver enzyme was much stronger.
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200℃ 이하 저온 공정으로 제조된 다기능 실리콘 질화물 박막의 조성이 전기적 특성에 미치는 영향
금기수 ( Ki Su Keum ),황재담 ( Jae Dam Hwang ),김주연 ( Joo Youn Kim ),홍완식 ( Wan Shick Hong ) 대한금속재료학회 ( 구 대한금속학회 ) 2012 대한금속·재료학회지 Vol.50 No.4
Electrical properties as a function of composition in silicon nitride (SiNx) films grown at low temperatures (<200℃) were studied for applications to photonic devices and thin film transistors. Both siliconrich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, R=[(N2 or NH3)/SiH4], and the RF plasma power. Depending on the film composition, the dielectric and optical properties of SiNx films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si=1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the siliconrich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to 150℃ of the process temperature.
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고희석 SiH4 가스를 이용하여 증착한 저온 PECVD 실리콘 질화물 박막의 기계적, 전기적 특성연구
노길선 ( Kil Sun No ),금기수 ( Ki Su Keum ),홍완식 ( Wan Shick Hong ) 대한금속재료학회(구 대한금속학회) 2012 대한금속·재료학회지 Vol.50 No.8
We report on electrical and mechanical properties of silicon nitride (SiNx) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at 200℃ from SiH4 highly diluted in N2. The films were also prepared from SiH4 diluted in He for comparison. The N2 dilution was also effective in improving adhesion of the SiNx films, fascilitating construction of thin film transistors (TFTs). Metalinsulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the SiNx films from N2-diluted SiH4 were estimated to be 1×1013Ω · cm, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of 0.16 cm2/Vs, a threshold voltage of 3 V, a subthreshold slope of 1.2V/dec, and an on/off ratio of >106.
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과량의 N2에 희석된 SiH4 가스를 이용한 150℃ 저온 PECVD 실리콘 질화물 박막의 물성이 TFT 소자 특성에 미치는 영향
노길선 ( Kil Sun No ),금기수 ( Ki Su Keum ),홍완식 ( Wan Shick Hong ) 대한금속재료학회(구 대한금속학회) 2013 대한금속·재료학회지 Vol.51 No.3
We report on the electrical properties of silicon nitride (SiNX) films deposited at 150℃ from highly diluted SiH4 in N2 by a plasma enhanced chemical vapor deposition (PECVD) method. The films were also prepared below 200℃ for comparison. Although the N2 dilution gas acted as a source of nitrogen atoms inside the SiNX film, it was necessary to introduce NH3 to obtain good dielectric quality in the low-temperature films. An amount of NH3 equal to the net SiH4 in the gas mixture was found to be adequate, and further addition of NH3 resulted in little improvement. For SiNX films deposited at 150℃, the NH3 addition decreased the C-V hysteresis (△Vth) from 15 V to 3 V, and increased the resistivity and the breakdown field strength from 109 Ωcm and 4 MV/cm to 1013 Ωcm and 7 MV/cm, respectively. When these films were applied as a gate dielectric layer, the resulting TFT prepared at 150℃ showed an on/off current ratio higher than 105, a threshold voltage of 1.1 V, a subthreshold slope of 1.2 V/dec, and a field effect mobility of 0.04 cm2/Vsec. Under a dc bias stress of VD = VG = 25 V, the on-current of this TFT was stable over a period of 5000 seconds.
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